TF256
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TF256
Тип транзистора: JFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.03
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20
V
|Vgs(off)|ⓘ -
Минимальное напряжение отсечки: 0.1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.001
A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 10000
Ohm
Тип корпуса: USFP
Аналог (замена) для TF256
TF256
Datasheet (PDF)
..1. Size:338K onsemi
tf256.pdf TF256Ordering number : ENA1616ASANYO SemiconductorsDATA SHEETN-channel Silicon Juncton FETElectret Condenser MicrophoneTF256ApplicationsFeatures High gain : GV=2.7dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products [1.0mm 0.6mm 0.27mm (max 0.3mm)] Best suited for use in electret condenser
0.1. Size:357K onsemi
tf256th.pdf Ordering number : ENA1617BTF256THN-Channel JFEThttp://onsemi.com20V, 140 to 450 A, 1.7mS, VTFPFeatures High gain : GV=2.7dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products Best suited for use in electret condenser microphone for audio equipments and telephones Excellent transient characteris
0.2. Size:282K aosemi
aotf256l.pdf AOTF256L150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOTF256L uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 12Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
0.3. Size:250K inchange semiconductor
aotf256l.pdf isc N-Channel MOSFET Transistor AOTF256LFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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