TF256 Datasheet and Replacement
Type Designator: TF256
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.03 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.001 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 10000 Ohm
Package: USFP
TF256 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TF256 Datasheet (PDF)
tf256.pdf
TF256 Ordering number ENA1616A SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET Electret Condenser Microphone TF256 Applications Features High gain GV=2.7dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products [1.0mm 0.6mm 0.27mm (max 0.3mm)] Best suited for use in electret condenser
tf256th.pdf
Ordering number ENA1617B TF256TH N-Channel JFET http //onsemi.com 20V, 140 to 450 A, 1.7mS, VTFP Features High gain GV=2.7dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products Best suited for use in electret condenser microphone for audio equipments and telephones Excellent transient characteris
aotf256l.pdf
AOTF256L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOTF256L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 12A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aotf256l.pdf
isc N-Channel MOSFET Transistor AOTF256L FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
Datasheet: SFT1443 , SFT1445 , SFT1446 , SFT1450 , SMP3003 , TF202THC , TF252 , TF252TH , IRFB4227 , TF256TH , WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S .
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