IXFH340N075T2 - описание и поиск аналогов

Advance Technical Information TrenchT2TM HiPerFETTM VDSS = 75V IXFH340N075T2 ID25 = 340A Power MOSFET IXFT340N075T2 RDS(on) 3.2m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (TAB) S VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSM Tra

X2-Class HiPerFETTM VDSS = 650V IXFP34N65X2 Power MOSFET ID25 = 34A IXFH34N65X2 RDS(on) 100m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 650 V S D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-247 VGSS Continuous 30 V (IXFH) VGSM Transien

Preliminary Technical Information Polar3TM HiperFETTM VDSS = 500V IXFQ34N50P3 ID25 = 34A Power MOSFETs IXFH34N50P3 RDS(on) 170m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V TO-247

X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2 RDS(on) 100m IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGS

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH34N65X2 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source