IXFH340N075T2 Datasheet. Specs and Replacement

Type Designator: IXFH340N075T2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 935 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 340 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TO247

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IXFH340N075T2 substitution

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IXFH340N075T2 datasheet

 ..1. Size:182K  ixys
 ixfh340n075t2 ixft340n075t2.pdf pdf_icon

IXFH340N075T2

Advance Technical Information TrenchT2TM HiPerFETTM VDSS = 75V IXFH340N075T2 ID25 = 340A Power MOSFET IXFT340N075T2 RDS(on) 3.2m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (TAB) S VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSM Tra... See More ⇒

 8.1. Size:282K  ixys
 ixfp34n65x2 ixfh34n65x2.pdf pdf_icon

IXFH340N075T2

X2-Class HiPerFETTM VDSS = 650V IXFP34N65X2 Power MOSFET ID25 = 34A IXFH34N65X2 RDS(on) 100m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 650 V S D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-247 VGSS Continuous 30 V (IXFH) VGSM Transien... See More ⇒

 8.2. Size:129K  ixys
 ixfh34n50p3 ixfq34n50p3.pdf pdf_icon

IXFH340N075T2

Preliminary Technical Information Polar3TM HiperFETTM VDSS = 500V IXFQ34N50P3 ID25 = 34A Power MOSFETs IXFH34N50P3 RDS(on) 170m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V TO-247 ... See More ⇒

 8.3. Size:205K  ixys
 ixfa34n65x2 ixfp34n65x2 ixfh34n65x2.pdf pdf_icon

IXFH340N075T2

X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2 RDS(on) 100m IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGS... See More ⇒

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Detailed specifications: IXFH28N50Q, IXFH28N60P3, IXFH30N40Q, IXFH30N50P, IXFH30N50Q3, IXFH30N60P, IXFH30N60Q, IXFH320N10T2, 10N60, IXFH36N50P, IXFH36N55Q, IXFH36N55Q2, IXFH36N60P, IXFH400N075T2, IXFH40N50Q, IXFH40N50Q2, IXFH42N50P2

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