Справочник MOSFET. IXFH88N30P

 

IXFH88N30P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXFH88N30P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 600 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 88 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 180 nC
   trⓘ - Время нарастания: 200 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO247

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IXFH88N30P Datasheet (PDF)

 ..1. Size:148K  ixys
ixft88n30p ixfh88n30p ixfk88n30p.pdf

IXFH88N30P
IXFH88N30P

PolarTM HiPerFETTM VDSS = 300VIXFT88N30PID25 = 88APower MOSFETIXFH88N30P RDS(on) 40m IXFK88N30Ptrr 200nsTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSTabSymbol Test Conditions Maximum RatingsTO-247(IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M

 ..2. Size:146K  ixys
ixfh88n30p ixft88n30p ixfk88n30p.pdf

IXFH88N30P
IXFH88N30P

PolarTM HiPerFETTM VDSS = 300VIXFT88N30PID25 = 88APower MOSFETIXFH88N30P RDS(on) 40m IXFK88N30Ptrr 200nsTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSTabSymbol Test Conditions Maximum RatingsTO-247(IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M

 9.1. Size:52K  ixys
ixfh80n10q ixft80n10q.pdf

IXFH88N30P
IXFH88N30P

IXFH 80N10Q VDSS = 100 VHiPerFETTMIXFT 80N10Q ID25 = 80 APower MOSFETs RDS(on) = 15 mWQ-Classtrr 200nsN-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary dataTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 VVGS Continuous 20 VVGSM Trans

 9.2. Size:204K  ixys
ixfh8n80 ixfh9n80.pdf

IXFH88N30P
IXFH88N30P

Preliminary Data SheetVDSS ID25 RDS(on) trrHiPerFETTMIXFH8N80 800V 8A 1.1 250 nsIXFH9N80 800V 9A 0.9 250 nsPower MOSFETsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilyTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transient 30 V TO-247 SMD*

 9.3. Size:176K  ixys
ixfh86n30t ixft86n30t.pdf

IXFH88N30P
IXFH88N30P

Advance Technical InformationTrenchTM HiperFETTM VDSS = 300VIXFH86N30TPower MOSFET ID25 = 86AIXFT86N30T RDS(on) 43m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-247 (IXFH)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 300 V DD (Tab)SVDGR TJ = 25C to 150C, RGS = 1M 300 VVGSS Continu

 9.4. Size:70K  ixys
ixfh80n20q ixfk80n20q ixft80n20q.pdf

IXFH88N30P
IXFH88N30P

IXFH 80N20QHiPerFETTMVDSS = 200 VIXFK 80N20QPower MOSFETs ID25 = 80 AIXFT 80N20QQ-Class RDS(on) = 28 mWtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 V(TAB)VGS Continuous 20 VVGSM Transi

 9.5. Size:114K  ixys
ixfh80n65x2.pdf

IXFH88N30P
IXFH88N30P

Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFH80N65X2Power MOSFET ID25 = 80A RDS(on) 40m N-Channel Enhancement ModeAvalanche RatedTO-247Fast Intrinsic DiodeGDSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 650 VS =

 9.6. Size:54K  ixys
ixfh80n085 ixft80n085.pdf

IXFH88N30P
IXFH88N30P

IXFH 80N085 VDSS = 85 VHiPerFETTMIXFT 80N085 ID25 = 80 APower MOSFETsRDS(on) = 9 mWN-Channel Enhancement Modetrr 200 nsAvalanche Rated, High dv/dtPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VVGS Continuous 20 VVGSM Transient 30 V(TAB)ID25 TC = 25C80 AIL

 9.7. Size:211K  ixys
ixfh80n65x2 ixfk80n65x2.pdf

IXFH88N30P
IXFH88N30P

X2-Class HiPerFETTM VDSS = 650VIXFH80N65X2Power MOSFET ID25 = 80AIXFK80N65X2 RDS(on) 38m TO-247 (IXFH)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeGDSD (Tab)TO-264P (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous

 9.8. Size:245K  ixys
ixfa80n25x3 ixfp80n25x3 ixfq80n25x3 ixfh80n25x3.pdf

IXFH88N30P
IXFH88N30P

Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 250VIXFA80N25X3Power MOSFET ID25 = 80AIXFP80N25X3 RDS(on) 16m IXFQ80N25X3TO-263 AA (IXFA)IXFH80N25X3N-Channel Enhancement ModeAvalanche RatedGSFast Intrinsic DiodeD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C250D S D (Tab)VTO-3P (IXFQ)VDGR

 9.9. Size:261K  inchange semiconductor
ixfh80n65x2.pdf

IXFH88N30P
IXFH88N30P

isc N-Channel MOSFET Transistor IXFH80N65X2FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV G

 9.10. Size:212K  inchange semiconductor
ixfh86n30t.pdf

IXFH88N30P
IXFH88N30P

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFH86N30TFEATURESWith TO-247 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

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