IXFH88N30P Datasheet. Specs and Replacement

Type Designator: IXFH88N30P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO247

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IXFH88N30P datasheet

 ..1. Size:148K  ixys
 ixft88n30p ixfh88n30p ixfk88n30p.pdf pdf_icon

IXFH88N30P

PolarTM HiPerFETTM VDSS = 300V IXFT88N30P ID25 = 88A Power MOSFET IXFH88N30P RDS(on) 40m IXFK88N30P trr 200ns TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Tab Symbol Test Conditions Maximum Ratings TO-247(IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

 ..2. Size:146K  ixys
 ixfh88n30p ixft88n30p ixfk88n30p.pdf pdf_icon

IXFH88N30P

PolarTM HiPerFETTM VDSS = 300V IXFT88N30P ID25 = 88A Power MOSFET IXFH88N30P RDS(on) 40m IXFK88N30P trr 200ns TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Tab Symbol Test Conditions Maximum Ratings TO-247(IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

 9.1. Size:52K  ixys
 ixfh80n10q ixft80n10q.pdf pdf_icon

IXFH88N30P

IXFH 80N10Q VDSS = 100 V HiPerFETTM IXFT 80N10Q ID25 = 80 A Power MOSFETs RDS(on) = 15 mW Q-Class trr 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V VGSM Trans... See More ⇒

 9.2. Size:204K  ixys
 ixfh8n80 ixfh9n80.pdf pdf_icon

IXFH88N30P

Preliminary Data Sheet VDSS ID25 RDS(on) trr HiPerFETTM IXFH8N80 800V 8A 1.1 250 ns IXFH9N80 800V 9A 0.9 250 ns Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V TO-247 SMD*... See More ⇒

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Detailed specifications: IXFH74N20P, IXFH7N90Q, IXFH80N08, IXFH80N085, IXFH80N10, IXFH80N15Q, IXFH86N30T, IXFH88N20Q, NCEP15T14, IXFH96N15P, IXFH96N20P, IXFH9N80Q, IXFK102N30P, IXFK120N20P, IXFK120N25, IXFK120N25P, IXFK120N30T

Keywords - IXFH88N30P MOSFET specs

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