IXFN180N25T - Даташиты. Аналоги. Основные параметры

Advance Technical InformationGigaMOSTM VDSS = 250VIXFN180N25TID25 = 155APower MOSFET RDS(on) 12.9m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227Fast Intrinsic DiodeE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M

HiPerFETTMIXFN 180N20 VDSS = 200 VPower MOSFETsID25 = 180 ASingle Die MOSFET RDS(on) = 10 mWDtrr

VDSS = 150 VIXFN 180N15PPolarHTTM HiPerFETID25 = 150 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche Ratedtrr 200 nsFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 175 C 150 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 15

IXFN 180N10 VDSS = 100 VHiPerFETTMID25 = 180 APower MOSFETRDS(on) = 8 mSingle MOSFET Die trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 100 VSVDGR TJ = 25C to 150C, RGS = 1M 100 VGVGS Continuous 20 VVGSM Transient 30 VSID

VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mWPower MOSFETsIXFN 180 N07 70 V 180 A 7 mWIXFN 200 N07 70 V 200 A 6 mWN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrtrr 250 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C N07 70 VN06 60 VSVDGR TJ = 25C to 150C; RGS = 1 MW N07 70 VGN06