IXFR34N80 - Даташиты. Аналоги. Основные параметры

IXFR 34N80 VDSS = 800 V HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 A (Electrically Isolated Backside) RDS(on) = 0.24 trr 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS

IXFC 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFR 36N50P ID25 = 19 A Power MOSFET RDS(on) 190 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ

IXFR 36N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 20 A Power MOSFET RDS(on) 200 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15

IXFC 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFR 30N60P ID25 = 15 A Power MOSFET RDS(on) 250 m Electrically Isolated Back Surface trr 250 ns N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ = 25 C to

PolarHVTM HiPerFET VDSS = 800 V IXFR 32N80P ID25 = 20 A Power MOSFET RDS(on) 290 m ISOPLUS247TM trr 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR T

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q 500 V 29 A 0.16 W IXFR 32N50Q 500 V 30 A 0.15 W (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data ISOPLUS 247TM Symbol Test Conditions Maximum Ratings E 153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V