3SK224 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 3SK224
Маркировка: U94_U95
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.2 W
Предельно допустимое напряжение сток-исток |Uds|: 18 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Максимально допустимый постоянный ток стока |Id|: 0.025 A
Максимальная температура канала (Tj): 125 °C
Выходная емкость (Cd): 0.9 pf
Сопротивление сток-исток открытого транзистора (Rds): 55 Ohm
Тип корпуса: SOT143
3SK224 Datasheet (PDF)
3sk224.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK224RF AMPLIFIER FOR UHF TV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise Figure: NF = 1.8 dB TYP. (f = 900 MHz)(Unit: mm) High Power Gain: GPS = 17 dB TYP. (f = 900 MHz)2.8+0.2 Suitable for use as RF amplifier in UHF TV tuner. 0.11.5+0.2 0.1 Auto
3sk222.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK222RF AMPLIFIER FOR FM TUNER AND VHF TV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good.(Unit: mm)CM = 92 dB TYP. @ f = 200 MHz, GR = 30 dB2.8+0.2 0.3 Low Noise Figure: NF1 = 1.2 dB TYP. (f = 200 MHz)1.5+0.2 0.1
3sk223.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK223RF AMPLIFIER FOR CATV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURES PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. (Unit: mm)CM = 101 dB TYP. @ f = 470 MHz, GR = 30 dB2.8+0.2 0.3 Low Noise Figure: NF1 = 2.2 dB TYP. (f = 470 MHz)1.5+0.2 0.3NF2 = 0.9 dB TYP
3sk225.pdf
3SK225 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK225 TV Tuner, VHF RF Amplifier Applications Unit: mmFM Tuner Applications TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. Low noise figure: NF = 2.0dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 1
3sk226.pdf
3SK226 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK226 TV Tuner, VHF RF Amplifier Applications Unit: mmFM Tuner Applications Superior cross modulation performance. Low reverse transfer capacitance: C = 0.015 pF (typ.) rss Low noise figure: NF = 1.1dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDra
3sk227.pdf
High Frequency FETs 3SK2273SK227Silicon N-Channel 4-pin MOSUnit : mmFor VHF amplification+0.22.8 0.3+0.20.65 0.15 1.5 0.3 0.65 0.15 Features Low noise-figure (NF)0.5R4 1 Large power gain PG Downsizing of sets by mini power package and automatic insertionby taping/magazine packing are available.3 2 Absolute Maximum Ratings (Ta = 25C)0.4 0.2Para
Другие MOSFET... 3SK193Q , 3SK194 , 3SK202Q , 3SK202R , 3SK206 , 3SK222 , 3SK219 , 3SK223 , CS150N03A8 , 3SK227 , 3SK37 , 3SK38 , 3SK38A , 3SK39 , 3SK40 , 3SK41 , 3SK44 .
