3SK224 - параметры транзистора MOSFET, его аналоги, datasheet

3SK224 Datasheet (PDF)

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DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK224RF AMPLIFIER FOR UHF TV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise Figure: NF = 1.8 dB TYP. (f = 900 MHz)(Unit: mm) High Power Gain: GPS = 17 dB TYP. (f = 900 MHz)2.8+0.2 Suitable for use as RF amplifier in UHF TV tuner. 0.11.5+0.2 0.1 Auto

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DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK222RF AMPLIFIER FOR FM TUNER AND VHF TV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good.(Unit: mm)CM = 92 dB TYP. @ f = 200 MHz, GR = 30 dB2.8+0.2 0.3 Low Noise Figure: NF1 = 1.2 dB TYP. (f = 200 MHz)1.5+0.2 0.1

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DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK223RF AMPLIFIER FOR CATV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURES PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. (Unit: mm)CM = 101 dB TYP. @ f = 470 MHz, GR = 30 dB2.8+0.2 0.3 Low Noise Figure: NF1 = 2.2 dB TYP. (f = 470 MHz)1.5+0.2 0.3NF2 = 0.9 dB TYP

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3SK225 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK225 TV Tuner, VHF RF Amplifier Applications Unit: mmFM Tuner Applications TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. Low noise figure: NF = 2.0dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 1