IXTY1R6N100D2 - параметры транзистора MOSFET, его аналоги, datasheet

IXTY1R6N100D2 Datasheet (PDF)

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IXTP 1R6N50P VDSS = 500 VPolarHVTMIXTY 1R6N50P ID25 = 1.6 APower MOSFET RDS(on) 6.5 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VG(TAB)DVGSM Transient 40 VSID25 TC = 25C 1.6 AIDM

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Preliminary Technical InformationDepletion Mode VDSX = 500VIXTY1R6N50D2MOSFET ID(on) > 1.6AIXTA1R6N50D2 RDS(on) 2.3 IXTP1R6N50D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C 100 WD (Tab)TJ -

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ixty1r4n120p.pdf pdf_icon

PolarTM VDSS = 1200VIXTY1R4N120PPower MOSFETs ID25 = 1.4AIXTA1R4N120P RDS(on) 13 IXTP1R4N120PTO-252 (IXTY)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSD (Tab)TO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VGVDGR TJ = 25C to 150C, RGS = 1M 1200 VSVGSS Contin

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