Справочник MOSFET. BUK6E3R2-55C

 

BUK6E3R2-55C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUK6E3R2-55C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 306 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 16 V

Пороговое напряжение включения Ugs(th): 2.8 V

Максимально допустимый постоянный ток стока (Id): 120 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 258 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0032 Ohm

Тип корпуса: I2PAK

Аналог (замена) для BUK6E3R2-55C

 

 

BUK6E3R2-55C Datasheet (PDF)

1.1. buk6e3r2-55c.pdf Size:181K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

3.1. buk6e3r4-40c.pdf Size:350K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E3R4-40C N-channel TrenchMOS intermediate level FET Rev. 3 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 5.1. buk6e2r3-40c.pdf Size:373K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E2R3-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

5.2. buk6e2r0-30c.pdf Size:181K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E2R0-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

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