BUK6E3R2-55C - описание и поиск аналогов

 

BUK6E3R2-55C. Аналоги и основные параметры

Наименование производителя: BUK6E3R2-55C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 306 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm

Тип корпуса: I2PAK

Аналог (замена) для BUK6E3R2-55C

- подборⓘ MOSFET транзистора по параметрам

 

BUK6E3R2-55C даташит

 ..1. Size:181K  philips
 buk6e3r2-55c.pdf pdf_icon

BUK6E3R2-55C

BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.1. Size:350K  philips
 buk6e3r4-40c.pdf pdf_icon

BUK6E3R2-55C

BUK6E3R4-40C N-channel TrenchMOS intermediate level FET Rev. 3 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.1. Size:373K  philips
 buk6e2r3-40c.pdf pdf_icon

BUK6E3R2-55C

BUK6E2R3-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 9.2. Size:181K  philips
 buk6e2r0-30c.pdf pdf_icon

BUK6E3R2-55C

BUK6E2R0-30C N-channel TrenchMOS intermediate level FET Rev. 02 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , BUK6C1R5-40C , BUK6E2R0-30C , BUK6E2R3-40C , IRF4905 , BUK6E3R4-40C , BUK6E4R0-75C , BUK7105-40AIE , BUK7105-40ATE , BUK7107-40ATC , BUK7107-55AIE , BUK7107-55ATE , BUK7108-40AIE .

 

 

 


 
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