Справочник MOSFET. BUK6E3R2-55C

 

BUK6E3R2-55C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUK6E3R2-55C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 306 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 16 V

Пороговое напряжение включения Ugs(th): 2.8 V

Максимально допустимый постоянный ток стока (Id): 120 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 258 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0032 Ohm

Тип корпуса: I2PAK

Аналог (замена) для BUK6E3R2-55C

 

 

BUK6E3R2-55C Datasheet (PDF)

1.1. buk6e3r2-55c.pdf Size:181K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

3.1. buk6e3r4-40c.pdf Size:350K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E3R4-40C N-channel TrenchMOS intermediate level FET Rev. 3 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfo

 5.1. buk6e2r0-30c.pdf Size:181K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E2R0-30C N-channel TrenchMOS intermediate level FET Rev. 02 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

5.2. buk6e2r3-40c.pdf Size:373K _philips

BUK6E3R2-55C
BUK6E3R2-55C

BUK6E2R3-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perfor

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


BUK6E3R2-55C
  BUK6E3R2-55C
  BUK6E3R2-55C
 

social 

Список транзисторов

Обновления

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

Back to Top