BUK6E3R2-55C Datasheet. Specs and Replacement

Type Designator: BUK6E3R2-55C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 306 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: I2PAK

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BUK6E3R2-55C datasheet

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BUK6E3R2-55C

BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒

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 buk6e3r4-40c.pdf pdf_icon

BUK6E3R2-55C

BUK6E3R4-40C N-channel TrenchMOS intermediate level FET Rev. 3 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high ... See More ⇒

 9.1. Size:373K  philips
 buk6e2r3-40c.pdf pdf_icon

BUK6E3R2-55C

BUK6E2R3-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p... See More ⇒

 9.2. Size:181K  philips
 buk6e2r0-30c.pdf pdf_icon

BUK6E3R2-55C

BUK6E2R0-30C N-channel TrenchMOS intermediate level FET Rev. 02 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒

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Detailed specifications: BUK663R5-55C, BUK663R7-75C, BUK664R4-55C, BUK664R6-40C, BUK664R8-75C, BUK6C1R5-40C, BUK6E2R0-30C, BUK6E2R3-40C, IRFP064N, BUK6E3R4-40C, BUK6E4R0-75C, BUK7105-40AIE, BUK7105-40ATE, BUK7107-40ATC, BUK7107-55AIE, BUK7107-55ATE, BUK7108-40AIE

Keywords - BUK6E3R2-55C MOSFET specs

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