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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C) BC635 BC637 BC639 DESCRIPTION SYMBOL BC636 BC638 BC640 UNIT VCEO Collector Emitter Voltage 45 60 80 V VCBO Collector Base Voltage 45 60 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 1.0 A Total Device Dissipation at Ta=25 C PD 800 mW Derate Above 25 C 6.4 mW/ C Total Device Dissipation at Ta=25 C **PD 1.0 W Total Device Dissipation at Tc=25 C PD 2.75 W Derate Above 25 C 22 mW/ C Operating And Storage Junction Tj, Tstg - 55 to +150 C Temperature Range THERMAL RESISTANCE Rth (j-c) Junction to Case 45 C/W Rth