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SEMICONDUCTOR FTD882D TECHNICAL DATA FTD882D TRANSISTOR A I FEATURES C J Low Speed Switching DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 Symbol Parameter Value Unit H H 1 00 MAX I 2 30 0 2 L F F VCBO Collector-Base Voltage 40 V J 0 5 0 1 L 0 50 0 10 1 2 3 VCEO Collector-Emitter Voltage 30 V O 1 6 0 2 Q 0 95 MAX VEBO Emitter-Base Voltage 6 V 1 BASE IC Collector Current -Continuous 3 A 2 COLLECTOR 3 EMITTER 10 PC Collector Power Dissipation(Tc=25 ) W Thermal Resistance, junction to Ambient R JA 100 /W Tj Junction Temperature 150 D-PAK (TO-252) Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base