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isc Silicon NPN Power Transistor 2N6654 DESCRIPTION High Voltage Capability High Current Current Capability Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for use in switching and linear applications in military and power conversion. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 350 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 20 A C I Collector Current-Peak 30 A CM I Base Current-Continuous 10 A B Collector Power Dissipation P 150 W C @T =25 C T Junction Temperature -65 175 j T Storage Temperature Range -65 200 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.0 /W t