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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP260NPBF FEATURES With TO-247 packaging Ease of paralleling High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Voltage 20 V GSS Drain Current-Continuous@T =25 C 50 I A D 35 T =100 C I Drain Current-Single Pulsed 200 A DM Total Dissipation @T =25 C P 300 W D T =100 C T Operating Junction Temperature -55 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.5 /W Rth(ch-a) Channel-to-ambient th