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AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.4m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S Description ID (Package Limited) 195A Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve D D extremely low on-resistance per silicon area. Additional features of D this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable S S S D device for use in Automotive appl