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PD - 97620 AUTOMOTIVE GRADE AUIRLR2703 Advanced Planar Technology HEXFET Power MOSFET Logic-Level Gate Drive Low On-Resistance D Dynamic dV/dT Rating V(BR)DSS 30V 175 C Operating Temperature RDS(on) max. 45m Fast Switching G ID (Silicon Limited) Fully Avalanche Rated 23A Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 20A Lead-Free, RoHS Compliant Automotive Qualified* D Description S Specifically designed for Automotive applications, G this cellular design of HEXFET Power MOSFETs D-Pak utilizes the latest processing techniques to achieve AUIRLR2703 low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power GDS MOSFETs are well known for, provides the designer Gate Drain Source with an extremely efficient and