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SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002E SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features Low On-Resistance RDS(ON) Low Gate Threshold Voltage 1 2 +0.02 Low Input Capacitance +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Fast Switching Speed Low Input/Output Leakage 1.Base 1 GATE 2.Emitter 2 SOURCE 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Drain-Gate Voltage RGS 1.0M VDGR 60 V Gate-Source Voltage -Continuous 20 VGS -Pulsed 40 Continuous Drain Current ID 240 mA Power Dissipation PD 300 mW Thermal Resistance.Junction- to-Ambient RthJA 417 /W Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS VGS = 0V, ID = 10