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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC237/D Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 237 238 239 Rating Symbol Unit CASE 29 04, STYLE 17 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 25 25 Vdc Collector Emitter Voltage VCES 50 30 30 Vdc Emitter Base Voltage VEBO 6.0 5.0 5.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Dissipation @ TA = 25 C PD 350 mW Derate above 25 C 2.8 mW/ C Total Device Dissipation @ TC = 25 C PD 1.0 Watts Derate above 25 C 8.0 mW/ C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 C/W Thermal Resistance, Junction to Case RqJC 125 C/W ELECTRICAL CHA