2SB506 - описание и поиск аналогов

 ..1. Size:179K  inchange semiconductor
 2sb506.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB506 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -5A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifi

 9.1. Size:56K  toshiba
 2sb502a 2sb503a.pdf 

 9.2. Size:42K  sanyo
 2sb508.pdf 

 9.3. Size:112K  mospec
 2sb507.pdf 

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 9.4. Size:25K  no
 2sb509.pdf 

 9.5. Size:161K  jmnic
 2sb509.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE

 9.6. Size:158K  jmnic
 2sb507.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SB507 DESCRIPTION With TO-220C package Complement to type 2SD313 Low collector saturation voltage APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base

 9.7. Size:236K  lge
 2sb507.pdf 

2SB507(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A DC Current Gain hFE=40 320@IC=-1A Complementray to NPN 2SD313 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base V

 9.8. Size:215K  inchange semiconductor
 2sb503.pdf 

isc Silicon PNP Power Transistors 2SB503 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO High Power Dissipation- P = 25W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 9.9. Size:193K  inchange semiconductor
 2sb508.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB508 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.0V(Max) @I = -2.0A CE(sat) C Complement to Type 2SD314 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the output stage of 15W

 9.10. Size:215K  inchange semiconductor
 2sb502.pdf 

isc Silicon PNP Power Transistors 2SB502 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High Power Dissipation- P = 25W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 9.11. Size:129K  inchange semiconductor
 2sb509.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER

 9.12. Size:221K  inchange semiconductor
 2sb507.pdf 

isc Silicon PNP Power Transistor 2SB507 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.0V(Max) @I = -2.0A CE(sat) C Complement to Type 2SD313 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the output stage of 15W to 25W AF power amplif