2SB506 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB506
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO3
2SB506 Transistor Equivalent Substitute - Cross-Reference Search
2SB506 Datasheet (PDF)
2sb506.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB506DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifi
2sb509.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE
2sb507.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB507 DESCRIPTION With TO-220C package Complement to type 2SD313 Low collector saturation voltage APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base
2sb507.pdf
2SB507(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A DC Current Gain hFE=40~320@IC=-1A Complementray to NPN 2SD313 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base V
2sb503.pdf
isc Silicon PNP Power Transistors 2SB503DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier and regulatorapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sb508.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB508DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -2.0ACE(sat) CComplement to Type 2SD314Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W
2sb502.pdf
isc Silicon PNP Power Transistors 2SB502DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier and regulatorapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sb509.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER
2sb507.pdf
isc Silicon PNP Power Transistor 2SB507DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -2.0ACE(sat) CComplement to Type 2SD313Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W to 25W AF poweramplif
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
