2SB510-5. Аналоги и основные параметры
Наименование производителя: 2SB510-5
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 25 MHz
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO39
Аналоги (замена) для 2SB510-5
- подборⓘ биполярного транзистора по параметрам
2SB510-5 даташит
9.1. Size:740K sanyo
2sb514.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res
9.3. Size:165K jmnic
2sb514.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB514 DESCRIPTION With TO-220C package Complement to type 2SD330 Low collector saturation voltage APPLICATIONS Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Abso
9.4. Size:147K jmnic
2sb512.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB512 DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PA
9.5. Size:155K jmnic
2sb511.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB511 DESCRIPTION With TO-220C package Complement to type 2SD325 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base
9.6. Size:179K inchange semiconductor
2sb518.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB518 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -90V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -5A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching an
9.7. Size:212K inchange semiconductor
2sb513.pdf 
isc Silicon PNP Power Transistor 2SB513 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage Complement to Type 2SD366 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
9.8. Size:190K inchange semiconductor
2sb515.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB515 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -2A CE(sat) C Complement to Type 2SD331 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier
9.9. Size:123K inchange semiconductor
2sb514.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB514 DESCRIPTION With TO-220C package Complement to type 2SD330 Low collector saturation voltage APPLICATIONS Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sym
9.10. Size:213K inchange semiconductor
2sb512.pdf 
isc Silicon PNP Power Transistor 2SB512 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max) @I = -2.0A CE(sat) C Complement to Type 2SD365 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M
9.11. Size:218K inchange semiconductor
2sb511.pdf 
isc Silicon PNP Power Transistor 2SB511 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max) @I = -1.5A CE(sat) C Complement to Type 2SD325 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 5W AF power amplifier output applications. ABSOLUTE MA
9.12. Size:178K inchange semiconductor
2sb519.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB519 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -110V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -6A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a
Другие транзисторы: 2SB508, 2SB508C, 2SB508D, 2SB508E, 2SB508F, 2SB509, 2SB51, 2SB510, S8550, 2SB511, 2SB511C, 2SB511D, 2SB511E, 2SB511F, 2SB512, 2SB512A, 2SB513
