Биполярный транзистор 2SB562 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB562
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 175 MHz
Ёмкость коллекторного перехода (Cc): 70 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO92
2SB562 Datasheet (PDF)
2sb562.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER 1 FEATURES TO-92* Low frequency power amplifier * Complement to 2SD468 1TO-92NL ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SB562L-x-T92-B 2SB562G-x-T92-B TO-92 E C B Tape Box2SB562L-x-T92-K 2SB562G-x-T92-K TO-92
2sb562.pdf
2SB562Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD468OutlineTO-92MOD1. Emitter2. Collector3. Base3212SB562Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5 VCollector current IC 1
2sb562-b.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB562Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier.PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material: Molded Plastic. UL Flammability
2sb562-c.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB562Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier.PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material: Molded Plastic. UL Flammability
2sb566.pdf
2SB566(K), 2SB566A(K)Silicon PNP Triple DiffusedApplicationLow frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SB566(K) 2SB566A(K) UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage V
2sb561.pdf
2SB561Silicon PNP EpitaxialADE-208-1023 (Z)1st. EditionMar. 2001Application Low frequency power amplifier Complementary pair with 2SD467OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SB561Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base vo
2sb561.pdf
2SB561 -0.7A , -25V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Frequency Power Amplifier G HEmitterCollectorBase JA DMillimeter REF. CLASSIFICATION OF hFE Min. Max.A 4.40 4.70BB 4.30 4.70Product-Rank 2SB561-B 2SB561-CC 12.70 -
2sb566 2sb566a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin
2sb560 to-92mod.pdf
2SB560 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 12. COLLECTOR 2 3 3. BASE Features High reverse voltage 5.8006.200Low saturation voltage Suitable universal AF power amplifier use 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Value Units0.4000.600VCBO Collector-Base Voltage -100 V 13.80014.200VC
2sb565.pdf
isc Silicon PNP Power Transistor 2SB565DESCRIPTIONLow Collector Saturation Voltage:V = -1.0(V)(Max)@I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE MAXIMUM RATI
2sb568.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB568DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -2.0(Max.) @I = -0.5ACE(sat) CComplement to Type 2SD478Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output
2sb566 2sb566a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol
2sb566.pdf
isc Silicon PNP Power Transistor 2SB566DESCRIPTIONLow Collector Saturation Voltage:V = -1.0(V)(Max)@I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOComplement to Type 2SD476Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applica
2sb567.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB567DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -2.0(Max.) @I = -0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output applications.ABSOLUTE MAXIM
2sb563.pdf
isc Silicon PNP Power Transistor 2SB563DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -3ACE(sat) CComplement to Type 2SD297Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSO
2sb566-a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS