INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB568DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -2.0(Max.) @I = -0.5ACE(sat) CComplement to Type 2SD478Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB562Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier.PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material: Molded Plastic. UL Flammability

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB562Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier.PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material: Molded Plastic. UL Flammability

UNISONIC TECHNOLOGIES CO., LTD 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER 1 FEATURES TO-92* Low frequency power amplifier * Complement to 2SD468 1TO-92NL ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SB562L-x-T92-B 2SB562G-x-T92-B TO-92 E C B Tape Box2SB562L-x-T92-K 2SB562G-x-T92-K TO-92

2SB562Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD468OutlineTO-92MOD1. Emitter2. Collector3. Base3212SB562Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5 VCollector current IC 1

2SB566(K), 2SB566A(K)Silicon PNP Triple DiffusedApplicationLow frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SB566(K) 2SB566A(K) UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage V

2SB561Silicon PNP EpitaxialADE-208-1023 (Z)1st. EditionMar. 2001Application Low frequency power amplifier Complementary pair with 2SD467OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SB561Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base vo

2SB561 -0.7A , -25V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Frequency Power Amplifier G HEmitterCollectorBase JA DMillimeter REF. CLASSIFICATION OF hFE Min. Max.A 4.40 4.70BB 4.30 4.70Product-Rank 2SB561-B 2SB561-CC 12.70 -

JMnic Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin

2SB560 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 12. COLLECTOR 2 3 3. BASE Features High reverse voltage 5.8006.200Low saturation voltage Suitable universal AF power amplifier use 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Value Units0.4000.600VCBO Collector-Base Voltage -100 V 13.80014.200VC

isc Silicon PNP Power Transistor 2SB565DESCRIPTIONLow Collector Saturation Voltage:V = -1.0(V)(Max)@I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE MAXIMUM RATI

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol

isc Silicon PNP Power Transistor 2SB566DESCRIPTIONLow Collector Saturation Voltage:V = -1.0(V)(Max)@I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOComplement to Type 2SD476Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applica

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB567DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -2.0(Max.) @I = -0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output applications.ABSOLUTE MAXIM

isc Silicon PNP Power Transistor 2SB563DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -3ACE(sat) CComplement to Type 2SD297Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSO

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol