2SB609A - описание и поиск аналогов

 8.1. Size:180K  inchange semiconductor
 2sb609.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB609 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -80V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -2A CE(sat) C Wide area of safe operation With TO-66 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio fre

 9.1. Size:110K  nec
 2sb601.pdf 

DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) High-DC current gain due to Darlington connection Low collector saturation voltage Low collector cutoff current Ideal for use in direct drive from IC output for magnet drivers s

 9.2. Size:171K  nec
 2sb605.pdf 

 9.3. Size:171K  jmnic
 2sb601.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SB601 DESCRIPTION With TO-220C package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low-frequency power amplifier and low-speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=

 9.4. Size:144K  jmnic
 2sb600.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SB600 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SD555 APPLICATIONS For use in audio and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAME

 9.5. Size:183K  inchange semiconductor
 2sb604.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB604 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -70V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.5(Max.) @I = -4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applicat

 9.6. Size:219K  inchange semiconductor
 2sb601.pdf 

isc Silicon PNP Darlington Power Transistor 2SB601 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in

 9.7. Size:215K  inchange semiconductor
 2sb600.pdf 

isc Silicon PNP Power Transistors 2SB600 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO High Power Dissipation- P = 200W(Max)@T =25 C C Complement to Type 2SD555 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.8. Size:184K  inchange semiconductor
 2sb608.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB608 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -180V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -0.5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications .