2SB609A Datasheet and Replacement

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB609DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -80V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWide area of safe operationWith TO-66 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio fre

DATA SHEETSILICON POWER TRANSISTOR2SB601PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High-DC current gain due to Darlington connection Low collector saturation voltage Low collector cutoff current Ideal for use in direct drive from IC output for magnet drivers s

JMnic Product SpecificationSilicon PNP Power Transistors 2SB601 DESCRIPTION With TO-220C package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low-frequency power amplifier and low-speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=

JMnic Product Specification Silicon PNP Power Transistors 2SB600 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SD555 APPLICATIONS For use in audio and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAME

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB604DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -70V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5(Max.) @I = -4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicat

isc Silicon PNP Darlington Power Transistor 2SB601DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in

isc Silicon PNP Power Transistors 2SB600DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOHigh Power Dissipation-: P = 200W(Max)@T =25C CComplement to Type 2SD555Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB608DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -180V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -0.5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications .