Биполярный транзистор 2SB67 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB67
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 55 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 75 °C
Граничная частота коэффициента передачи тока (ft): 0.4 MHz
Ёмкость коллекторного перехода (Cc): 70 pf
Статический коэффициент передачи тока (hfe): 45
Корпус транзистора: TO1
2SB67 Datasheet (PDF)
2sb676.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION With TO-220C package High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) DARLINGTON APPLICATIONS For switching applications Hammer drive, pulse motor drive applications Power amplifier applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2 mounting base 3
2sb679.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB679 DESCRIPTION High Power Dissipation- : PC= 100W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Complement to Type 2SC1079 APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITV
2sb676.pdf
isc Silicon PNP Darlington Power Transistor 2SB676DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD686Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO
2sb674.pdf
isc Silicon PNP Darlington Power Transistor 2SB674DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SD634Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive applica
2sb673.pdf
isc Silicon PNP Darlington Power Transistor 2SB673DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -3AFE CCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD633Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSH
2sb675.pdf
isc Silicon PNP Darlington Power Transistor 2SB675DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SD635Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive applica
2sb677.pdf
isc Silicon PNP Darlington Power Transistor 2SB677DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applications.
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050