2SB689 - Даташиты. Аналоги. Основные параметры

isc Silicon PNP Power Transistor 2SB689 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATING

UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -120 V Collector-Emi

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2SB688 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SD716 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collect

JMnic Product Specification Silicon PNP Power Transistors 2SB686 DESCRIPTION With TO-3P(I) package Complement to type 2SD716 APPLICATIONS Power amplifier applications Recommend for 30 35W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SB688 DESCRIPTION With TO-3P(I) package Complement to type 2SD718 APPLICATIONS Power amplifier applications Recommend for 45 50W audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Abs

PNP PNP Epitaxial Silicon Transistor R NPN 2SB688 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =110V (min) High collector voltage V =110V (min) CEO CEO V =180V (min) V =180V (min) CEO CEO 2SD718 Complementary to 2S

SEMICONDUCTOR 2SB688 TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V

2SB688(3CA688) PNP /SILICON PNP TRANSISTOR Purpose Designed for use in general-purpose amplifier and switching application. 45-50W 2SD718(3DA718) Features Recommend for 45-50W audio frequency amplifier output stage, Complementary to 2SD718(3DA718). /Absolut

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD718 APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

isc Silicon PNP Power Transistor 2SB681 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For AF power amplifier use. Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB680 DESCRIPTION High Power Dissipation- PC= 100W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min.) Complement to Type 2SC1080 APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC

isc Silicon PNP Power Transistor 2SB686 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD716 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 30 35W high-fidelity audio frequency amplifier output stage. ABSOLUTE

isc Silicon PNP Power Transistor 2SB683 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

isc Silicon PNP Power Transistor 2SB682 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

isc Silicon PNP Power Transistor 2SB688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD718 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applicat