Биполярный транзистор 2SB689 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB689
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO218
2SB689 Datasheet (PDF)
2sb689.pdf
isc Silicon PNP Power Transistor 2SB689DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and TV verticaldeflection output applications.ABSOLUTE MAXIMUM RATING
2sb688.pdf
UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1TO-3P1: BASE 2: COLLECTOR 3: EMITTER*Pb-free plating product number: 2SB688LABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO -120 VCollector-Emi
2sb688.pdf
2SB688 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SD716ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collect
2sb686.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB686 DESCRIPTION With TO-3P(I) package Complement to type 2SD716 APPLICATIONS Power amplifier applications Recommend for 30~35W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sb688.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB688 DESCRIPTION With TO-3P(I) package Complement to type 2SD718 APPLICATIONS Power amplifier applications Recommend for 45~50W audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbs
2sb688 to3p.pdf
SEMICONDUCTOR2SB688TECHNICAL DATAPNP EPITAXIAL SILICON TRANSISTORHIGH POWER AMPLIFIER APPLICATION FEATURES* Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1TO-3P1: BASE 2: COLLECTOR 3: EMITTER*Pb-free plating product number: 2SB688LABSOLUTE MAXIMUM RATINGS(Ta=25)PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V
2sb688 3ca688.pdf
2SB688(3CA688) PNP /SILICON PNP TRANSISTOR : Purpose: Designed for use in general-purpose amplifier and switching application. 45-50W 2SD718(3DA718) Features: Recommend for 45-50W audio frequency amplifier output stage, Complementary to 2SD718(3DA718). /Absolut
2sb688r 2sb688o.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SB688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD718APPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
2sb681.pdf
isc Silicon PNP Power Transistor 2SB681DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor AF power amplifier use.Recommended for use in output stage of 80 watts poweramplifier .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2sb680.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB680 DESCRIPTION High Power Dissipation- : PC= 100W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) Complement to Type 2SC1080 APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVC
2sb686.pdf
isc Silicon PNP Power Transistor 2SB686DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD716Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 30~35W high-fidelity audio frequencyamplifier output stage.ABSOLUTE
2sb683.pdf
isc Silicon PNP Power Transistor 2SB683DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
2sb682.pdf
isc Silicon PNP Power Transistor 2SB682DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
2sb688.pdf
isc Silicon PNP Power Transistor 2SB688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD718Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicat
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
