2SB697 - Даташиты. Аналоги. Основные параметры

JMnic Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION With TO-3 package Complement to type 2SD733/733K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-

isc Silicon PNP Power Transistors 2SB697 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SD733 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. Recommended for output stage of 80W

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION With TO-3 package Complement to type 2SD733/733K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simpli

isc Silicon PNP Power Transistors 2SB696 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SD732 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. Recommended for output stage of 60W

isc Silicon PNP Power Transistor 2SB690 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High Power Dissipation Complement to Type 2SD726 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

isc Silicon PNP Power Transistor 2SB695 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD731 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATI

isc Silicon PNP Power Transistor 2SB691 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD727 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUTE

isc Silicon PNP Power Transistor 2SB692 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD728 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUT