2SB70 datasheet, аналоги, основные параметры
Наименование производителя: 2SB70 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.01 A
Предельная температура PN-перехода (Tj): 75 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.2 MHz
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO1
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Аналоги (замена) для 2SB70
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2SB70 даташит
0.1. Size:52K panasonic
2sb709a e.pdf 
Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD601A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratin
0.3. Size:98K panasonic
2sb709a.pdf 
Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SD0601A (2SD601A) 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.95) (0.95) packi
0.6. Size:617K secos
2sb709a.pdf 
2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 For general amplification A Complementary of the 2SD601A L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank 2SB709A-Q 2SB709A-R 2SB709A-S 2 K E Range 160 260 210 340 290 460
0.7. Size:656K jiangsu
2sb709a.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB709A TRANSISTOR (PNP) FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO -45 V Collector-Emitter Voltage VCEO
0.8. Size:176K jmnic
2sb707 2sb708.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB707 2SB708 DESCRIPTION With TO-220C package Complement to type 2SD568/569 APPLICATIONS For low frequency power amplifier low speed switching industrial use PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS
0.9. Size:174K jmnic
2sb705 2sb705a 2sb705b.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60 120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simpl
0.10. Size:442K htsemi
2sb709a.pdf 
2SB7 09A TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO -45 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -7 V Collector Current -Continuous IC -100 mA Collector Power
0.11. Size:291K lge
2sb709a sot-23.pdf 
2SB709A SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features For general amplification Complementary to 2SD601A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO -45 V Collector-Emitter Voltage VCEO -45 V Dimensions in inches and (millimeters) Emitter-Base Voltage VEBO -7 V Collector Curre
0.12. Size:1063K kexin
2sb709a.pdf 
SMD Type Transistors PNP Transistors 2SB709A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 For general amplification Complimentary to 2SD601A. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage
0.13. Size:123K hfzt
2sb709lt1.pdf 
2SB709LT1 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER Package SOT-23 * Complement to 2SD601LT1 * Collector Current Ic= -100mA * Collector-Emitter Voltage Vce= -45V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -50 V PIN 1 2 3 Collector-Emitter Voltage Vceo -45 V STYLE Emitter-Base Voltage Vebo -5
0.14. Size:223K inchange semiconductor
2sb705b.pdf 
isc Silicon PNP Power Transistor 2SB705B DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SD745B High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for output stages of 60 120 watts audio amplifier and voltage regulations. ABSOLUTE MAXIMUM RATINGS(T =25
0.15. Size:219K inchange semiconductor
2sb703.pdf 
isc Silicon PNP Power Transistor 2SB703 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO DC Current Gain- h = 40 200 @I = -0.5A FE C Complement to Type 2SD743 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier, low speed switching applications. ABSOL
0.16. Size:218K inchange semiconductor
2sb707.pdf 
isc Silicon PNP Power Transistor 2SB707 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -5A CE(sat) C Complement to Type 2SD568 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM
0.17. Size:137K inchange semiconductor
2sb705 a b.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60 120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting b
0.18. Size:222K inchange semiconductor
2sb705.pdf 
isc Silicon PNP Power Transistor 2SB705 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Complement to Type 2SD745 High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications Suitable for output stages of 60 120 watts audio amplifier and vo
0.19. Size:125K inchange semiconductor
2sb707 2sb708.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB707 2SB708 DESCRIPTION With TO-220C package Complement to type 2SD568/569 APPLICATIONS For low frequency power amplifier low speed switching industrial use PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PAR
0.20. Size:219K inchange semiconductor
2sb708.pdf 
isc Silicon PNP Power Transistor 2SB708 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -5A CE(sat) C Complement to Type 2SD569 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMU
0.21. Size:137K inchange semiconductor
2sb705 2sb705a 2sb705b.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60 120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting b
Другие транзисторы: 2SB697, 2SB697K, 2SB698, 2SB698D, 2SB698E, 2SB698F, 2SB698G, 2SB699, 9014, 2SB700, 2SB700A, 2SB701, 2SB702, 2SB702A, 2SB703, 2SB703A, 2SB705
