2SB709A - описание и поиск аналогов

Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD601A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratin

Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SD0601A (2SD601A) 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.95) (0.95) packi

2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 For general amplification A Complementary of the 2SD601A L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank 2SB709A-Q 2SB709A-R 2SB709A-S 2 K E Range 160 260 210 340 290 460

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB709A TRANSISTOR (PNP) FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO -45 V Collector-Emitter Voltage VCEO

2SB7 09A TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO -45 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -7 V Collector Current -Continuous IC -100 mA Collector Power

2SB709A SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features For general amplification Complementary to 2SD601A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO -45 V Collector-Emitter Voltage VCEO -45 V Dimensions in inches and (millimeters) Emitter-Base Voltage VEBO -7 V Collector Curre

SMD Type Transistors PNP Transistors 2SB709A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 For general amplification Complimentary to 2SD601A. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage

2SB709LT1 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER Package SOT-23 * Complement to 2SD601LT1 * Collector Current Ic= -100mA * Collector-Emitter Voltage Vce= -45V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -50 V PIN 1 2 3 Collector-Emitter Voltage Vceo -45 V STYLE Emitter-Base Voltage Vebo -5

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JMnic Product Specification Silicon PNP Power Transistors 2SB707 2SB708 DESCRIPTION With TO-220C package Complement to type 2SD568/569 APPLICATIONS For low frequency power amplifier low speed switching industrial use PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

JMnic Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60 120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simpl

isc Silicon PNP Power Transistor 2SB705B DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SD745B High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for output stages of 60 120 watts audio amplifier and voltage regulations. ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SB703 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO DC Current Gain- h = 40 200 @I = -0.5A FE C Complement to Type 2SD743 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier, low speed switching applications. ABSOL

isc Silicon PNP Power Transistor 2SB707 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -5A CE(sat) C Complement to Type 2SD568 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60 120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting b

isc Silicon PNP Power Transistor 2SB705 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Complement to Type 2SD745 High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications Suitable for output stages of 60 120 watts audio amplifier and vo

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB707 2SB708 DESCRIPTION With TO-220C package Complement to type 2SD568/569 APPLICATIONS For low frequency power amplifier low speed switching industrial use PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PAR

isc Silicon PNP Power Transistor 2SB708 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -5A CE(sat) C Complement to Type 2SD569 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMU

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60 120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting b