Справочник транзисторов. 2SB709A

 

Биполярный транзистор 2SB709A - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB709A
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 40 MHz
   Ёмкость коллекторного перехода (Cc): 2.7 pf
   Статический коэффициент передачи тока (hfe): 90
   Корпус транзистора: TO236

 Аналоги (замена) для 2SB709A

 

 

2SB709A Datasheet (PDF)

 ..1. Size:52K  panasonic
2sb709a e.pdf

2SB709A
2SB709A

Transistor2SB709ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD601A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratin

 ..2. Size:98K  panasonic
2sb709a.pdf

2SB709A
2SB709A

Transistors2SB0709A (2SB709A)Silicon PNP epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SD0601A (2SD601A)0.40+0.100.050.16+0.100.063 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazine(0.95) (0.95)packi

 ..3. Size:617K  secos
2sb709a.pdf

2SB709A
2SB709A

2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 For general amplification A Complementary of the 2SD601A L33Top ViewC BCLASSIFICATION OF hFE 11 2Product-Rank 2SB709A-Q 2SB709A-R 2SB709A-S 2K ERange 160~260 210~340 290~460

 ..4. Size:656K  jiangsu
2sb709a.pdf

2SB709A
2SB709A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB709A TRANSISTOR (PNP) FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO

 ..5. Size:442K  htsemi
2sb709a.pdf

2SB709A
2SB709A

2SB7 09ATRANSISTOR(PNP) SOT-23 FEATURES 1. BASE For general amplification 2. EMITTER Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -7 VCollector Current -Continuous IC -100 mACollector Power

 ..6. Size:291K  lge
2sb709a sot-23.pdf

2SB709A
2SB709A

2SB709A SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features For general amplification Complementary to 2SD601A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO -45 VCollector-Emitter Voltage VCEO -45 V Dimensions in inches and (millimeters)Emitter-Base Voltage VEBO -7 VCollector Curre

 ..7. Size:1063K  kexin
2sb709a.pdf

2SB709A
2SB709A

SMD Type TransistorsPNP Transistors2SB709ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 For general amplification Complimentary to 2SD601A.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage

 8.1. Size:118K  panasonic
2sb709.pdf

2SB709A
2SB709A

 8.2. Size:123K  hfzt
2sb709lt1.pdf

2SB709A

2SB709LT1 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER Package:SOT-23 * Complement to 2SD601LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -50 V PIN: 1 2 3Collector-Emitter Voltage Vceo -45 V STYLE Emitter-Base Voltage Vebo -5

 9.1. Size:174K  mospec
2sd743 2sb703.pdf

2SB709A
2SB709A

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 9.2. Size:107K  no
2sb705b.pdf

2SB709A
2SB709A

 9.3. Size:176K  jmnic
2sb707 2sb708.pdf

2SB709A
2SB709A

JMnic Product Specification Silicon PNP Power Transistors 2SB707 2SB708 DESCRIPTION With TO-220C package Complement to type 2SD568/569 APPLICATIONS For low frequency power amplifier low speed switching industrial use PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

 9.4. Size:174K  jmnic
2sb705 2sb705a 2sb705b.pdf

2SB709A
2SB709A

JMnic Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simpl

 9.5. Size:223K  inchange semiconductor
2sb705b.pdf

2SB709A
2SB709A

isc Silicon PNP Power Transistor 2SB705BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOComplement to Type 2SD745BHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuitable for output stages of 60~120 watts audio amplifierand voltage regulations.ABSOLUTE MAXIMUM RATINGS(T =25

 9.6. Size:219K  inchange semiconductor
2sb703.pdf

2SB709A
2SB709A

isc Silicon PNP Power Transistor 2SB703DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEODC Current Gain-: h = 40~200 @I = -0.5AFE CComplement to Type 2SD743Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifier, lowspeed switching applications.ABSOL

 9.7. Size:218K  inchange semiconductor
2sb707.pdf

2SB709A
2SB709A

isc Silicon PNP Power Transistor 2SB707DESCRIPTIONHigh Collector Current: I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CComplement to Type 2SD568Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-speedswitching applications.ABSOLUTE MAXIMUM

 9.8. Size:137K  inchange semiconductor
2sb705 a b.pdf

2SB709A
2SB709A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting b

 9.9. Size:222K  inchange semiconductor
2sb705.pdf

2SB709A
2SB709A

isc Silicon PNP Power Transistor 2SB705DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOComplement to Type 2SD745High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsSuitable for output stages of 60~120 watts audio amplifierand vo

 9.10. Size:125K  inchange semiconductor
2sb707 2sb708.pdf

2SB709A
2SB709A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB707 2SB708 DESCRIPTION With TO-220C package Complement to type 2SD568/569 APPLICATIONS For low frequency power amplifier low speed switching industrial use PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PAR

 9.11. Size:219K  inchange semiconductor
2sb708.pdf

2SB709A
2SB709A

isc Silicon PNP Power Transistor 2SB708DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CComplement to Type 2SD569Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-speedswitching applications.ABSOLUTE MAXIMU

 9.12. Size:137K  inchange semiconductor
2sb705 2sb705a 2sb705b.pdf

2SB709A
2SB709A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB705/705A/705B DESCRIPTION With MT-200 package Complement to type 2SD745/745A/745B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting b

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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