isc Silicon PNP Power Transistor 2SB720DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD760Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta=2

Transistor2SB726Silicon PNP epitaxial planer typeFor general amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.High collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 80 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitter voltage VCEO 80 V1.27 1

Transistor2SB0726 (2SB726)Silicon PNP epitaxial planer typeFor general amplificationUnit: mmFeaturesHigh foward current transfer ratio hFE.High collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 80 VCollector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 VCollector curr

2SB727(K)Silicon PNP EpitaxialApplicationMedium speed and power switching complementary pair with 2SD768(K)OutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 1 k 400 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage

JMnic Product Specification Silicon PNP Power Transistors 2SB727K DESCRIPTION With TO-220C package Complement to type 2SD768K DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

isc Silicon PNP Power Transistors 2SB722DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB724DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applica

isc Silicon PNP Darlington Power Transistor 2SB727DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD768Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

isc Silicon PNP Power Transistors 2SB723DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SD753Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIM