Справочник транзисторов. 2SB724

 

Биполярный транзистор 2SB724 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB724
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO220

 Аналоги (замена) для 2SB724

 

 

2SB724 Datasheet (PDF)

 ..1. Size:187K  inchange semiconductor
2sb724.pdf

2SB724
2SB724

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB724DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applica

 9.1. Size:39K  panasonic
2sb726 e.pdf

2SB724
2SB724

Transistor2SB726Silicon PNP epitaxial planer typeFor general amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.High collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 80 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitter voltage VCEO 80 V1.27 1

 9.2. Size:53K  panasonic
2sb726.pdf

2SB724
2SB724

Transistor2SB0726 (2SB726)Silicon PNP epitaxial planer typeFor general amplificationUnit: mmFeaturesHigh foward current transfer ratio hFE.High collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 80 VCollector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 VCollector curr

 9.3. Size:37K  hitachi
2sb727.pdf

2SB724
2SB724

2SB727(K)Silicon PNP EpitaxialApplicationMedium speed and power switching complementary pair with 2SD768(K)OutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 1 k 400 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage

 9.4. Size:186K  jmnic
2sb727k.pdf

2SB724
2SB724

JMnic Product Specification Silicon PNP Power Transistors 2SB727K DESCRIPTION With TO-220C package Complement to type 2SD768K DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

 9.5. Size:216K  inchange semiconductor
2sb720.pdf

2SB724
2SB724

isc Silicon PNP Power Transistor 2SB720DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD760Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta=2

 9.6. Size:206K  inchange semiconductor
2sb722.pdf

2SB724
2SB724

isc Silicon PNP Power Transistors 2SB722DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 9.7. Size:214K  inchange semiconductor
2sb727.pdf

2SB724
2SB724

isc Silicon PNP Darlington Power Transistor 2SB727DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD768Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

 9.8. Size:211K  inchange semiconductor
2sb723.pdf

2SB724
2SB724

isc Silicon PNP Power Transistors 2SB723DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SD753Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIM

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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