2SB806 - аналоги, параметры транзистора - Справочник транзисторов

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SMD Type Transistors SMD Type PNP Tr ansistors 2SB806 Features Classification of hfe(1) 1.70 0.1 High collector to emitter voltage VCEO -120V. = 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V C

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SMD Type Transistors PNP Transistors 2SB800 1.70 0.1 Features High Collector to Emitter Voltage VCEO>-80V Complement to 2SD1001 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Curr

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SMD Type Transistors SMD Type PNP Tr ansistors 2SB805 1.70 0.1 Features High collector to emitter voltage VCEO -100V. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -5 V Collector current IC -0.7 A Collector current

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SMD Type Transistors PNP Transistors 2SB804 Features 1.70 0.1 World standard miniature package SOT-89 High collector to base voltage VCBO -100V Excell DC Current gain linearity. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -100 Collector

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