To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SB857, 2SB858Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SD1133 and 2SD1134OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SB857 2SB858 UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage VCEO 50 60 VEmitter to base

JMnic Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Coll

isc Silicon PNP Power Transistor 2SB858DESCRIPTIONCollector Current: I = -4ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD1134Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M

2SB852K Transistors High-gain Amplifier Transistor (-32V, -0.3A) 2SB852K External dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain. 2SB852K2) Built-in 4k resistor between base and emitter. 2.9 1.13) Complements the 2SD1383K. 0.4 0.8(3) Packaging specifications Type 2SB852K(2) (1)Package SMT30.95 0.950.15hFE B1.9Mark

2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a

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UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB857L-x-T60-K 2SB857G-x-T60-K TO-126 E C B Bulk2SB857L-x-T6C-K 2SB857G-x-T6C-K TO-126C E C B Bulk2SB857L-x-TA3-T 2SB857G-x-TA3-T TO-220 B C E Tu

2SB859Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SD1135OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 5 VCollector current IC 4

JMnic Product Specification Silicon PNP Power Transistors 2SB859 DESCRIPTION With TO-220C package Complement to type 2SD1135 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitt

Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.10.07MICROELECTRONICS CORP.Page No. : 1/4HSB857 / 2SB857PNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ....................................................................................

isc Silicon PNP Power Transistor 2SB856DESCRIPTIONCollector Current: I = -3ACLow Collector Saturation Voltage: V = -1.2V(Max)@I = -2ACE(sat) CHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon PNP Power Transistor 2SB850DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.2V(Max) @I = -5ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1117Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio amplifier,

isc Silicon PNP Power Transistor 2SB859DESCRIPTIONCollector Current: I = -4ACLow Collector Saturation Voltage: V = -2.0V(Max)@I = -2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD1135Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M

isc Silicon PNP Power Transistor 2SB855DESCRIPTIONCollector Current: I = -2ACLow Collector Saturation Voltage: V = -1.2V(Max)@I = -2ACE(sat) CHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon PNP Power Transistor 2SB857DESCRIPTIONCollector Current: I = -4ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD1133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M