Биполярный транзистор 2SB920LS - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB920LS
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 140
Корпус транзистора: TO220
2SB920LS Datasheet (PDF)
2sb920.pdf
isc Silicon PNP Power Transistor 2SB920DESCRIPTIONHigh Collector Current:I = -5ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -3ACE(sat) CComplement to Type 2SD1236Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose large current switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25
2sb922.pdf
Ordering number : ENN1429A2SB922 / 2SD1238PNP / NPN Epitaxial Planar Silicon Transistors2SB922 / 2SD1238Large Current Switching ApplicationsApplicationsPackage Dimensions Large current switching of relay drivers, high-speedunit : mminverters, converters.2022A[2SB922 / 2SD1238]Features15.63.24.814.02.0 Low collector-to-emitter saturation voltage :VCE(s
2sb928.pdf
Power Transistors2SB928, 2SB928ASilicon PNP epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1For TV vartical deflection outputComplementary to 2SD1250 and 2SD1250A1.5max. 1.1max.FeaturesHigh collector to emitter VCEO0.8 0.1 0.5max.High collector power dissipation PC2.54 0.3N type package enabling direct soldering of the
2sb929.pdf
Power Transistors2SB929, 2SB929ASilicon PNP epitaxial planar type Unit: mm8.5 0.2 3.4 0.36.0 0.5 1.0 0.1For power amplificationComplementary to 2SD1252 and 2SD1252AFeatures1.5max. 1.1max.High forward current transfer ratio hFE which has satisfactory linearityLow collector to emitter saturation voltage VCE(sat)0.8 0.1 0.5max.N type package enabling direct solder
2sb928a.pdf
SMD Type TransistorsPNP Transistors2SB928ATO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High collector-emitter voltage (Base open) VCEO High collector power dissipation PC Complementary to 2SD1250A0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum
2sb929a.pdf
SMD Type TransistorsPNP Transistors2SB929ATO-252Unit: mm Features+0.15 High forward current transfer ratio hFE6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1252A0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152
2sb928.pdf
SMD Type TransistorsPNP Transistors2SB928TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High collector-emitter voltage (Base open) VCEO High collector power dissipation PC Complementary to 2SD12500.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum R
2sb929.pdf
SMD Type TransistorsPNP Transistors2SB929TO-252Unit: mm Features+0.15 High forward current transfer ratio hFE6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD12520.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 C
2sb924.pdf
isc Silicon PNP Power Transistor 2SB924DESCRIPTIONWide Safety Operation AreaLow Collector Saturation Voltage: V = -0.5V(Max)@I = -12ACE(sat) CComplement to Type 2SD1240Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers, high-speed inverters, converters applications.A
2sb922.pdf
isc Silicon PNP Power Transistor 2SB922DESCRIPTIONHigh Collector Current:: I = -12ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -6ACE(sat) CComplement to Type 2SD1238Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers, high-speed inverters, converters applica
2sb925.pdf
isc Silicon PNP Power Transistor 2SB925DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -0.6V(Max)@I = -5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sb923.pdf
isc Silicon PNP Power Transistor 2SB923DESCRIPTIONHigh Collector Current:: I = -20ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -10ACE(sat) CComplement to Type 2SD1239Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers, high-speed inverters, converters applic
2sb921.pdf
isc Silicon PNP Power Transistor 2SB921DESCRIPTIONHigh Collector Current: I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -4ACE(sat) CComplement to Type 2SD1237Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050