Биполярный транзистор 2SB930A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB930A
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO218
2SB930A Datasheet (PDF)
2sb930a.pdf
SMD Type TransistorsPNP Transistors2SB930ATO-252Unit: mm Features+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 High forward current transfer ratio hFE 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1253A0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152
2sb930.pdf
Power Transistors2SB930, 2SB930ASilicon PNP epitaxial planar type Unit: mm8.5 0.2 3.4 0.36.0 0.5 1.0 0.1For power amplificationComplementary to 2SD1253 and 2SD1253AFeatures1.5max. 1.1max.High forward current transfer ratio hFE which has satisfactory linearityLow collector to emitter saturation voltage VCE(sat)0.8 0.1 0.5max.N type package enabling direct solder
2sb930.pdf
SMD Type TransistorsPNP Transistors2SB930TO-252Unit: mm Features+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 High forward current transfer ratio hFE 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD12530.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Co
2sb933.pdf
Power Transistors2SB933Silicon PNP epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power switching6.0 0.5 1.0 0.1Complementary to 2SD1256Features1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.Large collector current IC2.54 0.3N type package enabling direct sold
2sb931.pdf
Power Transistors2SB931Silicon PNP epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power switching6.0 0.5 1.0 0.1Complementary to 2SD1254Features1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.Large collector current IC2.54 0.3N type package enabling direct sold
2sb932.pdf
Power Transistors2SB932Silicon PNP epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power switching6.0 0.5 1.0 0.1Complementary to 2SD1255Features1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.Large collector current IC2.54 0.3N type package enabling direct sold
2sb934.pdf
Power Transistors2SB0934 (2SB934)Silicon PNP epitaxial planar typeFor Power switchingUnit: mm8.50.2 3.40.3Complementary to 2SD12576.00.2 1.00.1 Features Low collector-emitter saturation voltage VCE(sat)0 to 0.4 Satisfactory linearity of forward current transfer ratio hFER = 0.50.80.1R = 0.52.540.3 Large collector current IC1.00.11.4
2sb936.pdf
Power Transistors2SB0936 (2SB936), 2SB0936A (2SB936A)Silicon PNP epitaxial planar typeFor low-voltage switchingUnit: mm Features 8.50.2 3.40.36.00.2 1.00.1 Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to theprinted circuit board, etc. of small electronic equipment.0
2sb939.pdf
Power Transistors2SB939, 2SB939ASilicon PNP epitaxial planar type DarlingtonUnit: mmFor midium-speed power switching 8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SD1262 and 2SD1262AFeaturesHigh foward current transfer ratio hFE1.5max. 1.1max.High-speed switchingN type package enabling direct soldering of the radiating fin to0.8 0.1 0.5max.the printed circu
2sb935.pdf
Power Transistors2SB935, 2SB935ASilicon PNP epitaxial planar type Unit: mm8.5 0.2 3.4 0.36.0 0.5 1.0 0.1For low-voltage switchingFeaturesLow collector to emitter saturation voltage VCE(sat)1.5max. 1.1max.High-speed switchingN type package enabling direct soldering of the radiating fin to0.8 0.1 0.5max.the printed circuit board, etc. of small electronic equipmen
2sb933.pdf
SMD Type TransistorsPNP Transistors2SB933TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC0.127+0.1 Complementary to 2SD12560.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.1
2sb931.pdf
SMD Type TransistorsPNP Transistors2SB931TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC0.127+0.1 Complementary to 2SD1254 0.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.15
2sb932.pdf
SMD Type TransistorsPNP Transistors2SB932TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC0.127+0.1 Complementary to 2SD12550.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.1
2sb936a.pdf
SMD Type TransistorsPNP Transistors2SB936ATO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rati
2sb934.pdf
SMD Type TransistorsPNP Transistors2SB934TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC0.127+0.1 Complementary to 2SD12570.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.1
2sb936.pdf
SMD Type TransistorsPNP Transistors2SB936TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin
2sb935a.pdf
SMD Type TransistorsPNP Transistors2SB935ATO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low collector to emitter saturation voltage VCE(sat) High-speed switching0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin
2sb935.pdf
SMD Type TransistorsPNP Transistors2SB935TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low collector to emitter saturation voltage VCE(sat) High-speed switching0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050