2SB930A datasheet, аналоги, основные параметры
Наименование производителя: 2SB930A 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: TO218
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Аналоги (замена) для 2SB930A
- подборⓘ биполярного транзистора по параметрам
2SB930A даташит
..1. Size:1128K kexin
2sb930a.pdf 
SMD Type Transistors PNP Transistors 2SB930A TO-252 Unit mm Features +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 High forward current transfer ratio hFE 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1253A 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2
8.1. Size:49K panasonic
2sb930.pdf 
Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 For power amplification Complementary to 2SD1253 and 2SD1253A Features 1.5max. 1.1max. High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.8 0.1 0.5max. N type package enabling direct solder
8.2. Size:1124K kexin
2sb930.pdf 
SMD Type Transistors PNP Transistors 2SB930 TO-252 Unit mm Features +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 High forward current transfer ratio hFE 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1253 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Co
9.1. Size:57K panasonic
2sb933.pdf 
Power Transistors 2SB933 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SD1256 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold
9.3. Size:57K panasonic
2sb931.pdf 
Power Transistors 2SB931 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SD1254 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold
9.4. Size:58K panasonic
2sb932.pdf 
Power Transistors 2SB932 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SD1255 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold
9.7. Size:96K panasonic
2sb936.pdf 
Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) Silicon PNP epitaxial planar type For low-voltage switching Unit mm Features 8.5 0.2 3.4 0.3 6.0 0.2 1.0 0.1 Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 0
9.8. Size:73K panasonic
2sb939.pdf 
Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington Unit mm For midium-speed power switching 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SD1262 and 2SD1262A Features High foward current transfer ratio hFE 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circu
9.9. Size:58K panasonic
2sb935.pdf 
Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 For low-voltage switching Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circuit board, etc. of small electronic equipmen
9.10. Size:1176K kexin
2sb933.pdf 
SMD Type Transistors PNP Transistors 2SB933 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1256 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.1
9.11. Size:1181K kexin
2sb931.pdf 
SMD Type Transistors PNP Transistors 2SB931 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1254 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15
9.12. Size:1192K kexin
2sb932.pdf 
SMD Type Transistors PNP Transistors 2SB932 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1255 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.1
9.13. Size:1231K kexin
2sb936a.pdf 
SMD Type Transistors PNP Transistors 2SB936A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rati
9.14. Size:1185K kexin
2sb934.pdf 
SMD Type Transistors PNP Transistors 2SB934 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1257 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.1
9.15. Size:1216K kexin
2sb936.pdf 
SMD Type Transistors PNP Transistors 2SB936 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin
9.16. Size:1210K kexin
2sb935a.pdf 
SMD Type Transistors PNP Transistors 2SB935A TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin
9.17. Size:1194K kexin
2sb935.pdf 
SMD Type Transistors PNP Transistors 2SB935 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
Другие транзисторы: 2SB927T, 2SB927U, 2SB928, 2SB928A, 2SB929, 2SB929A, 2SB93, 2SB930, 2N2907, 2SB931, 2SB932, 2SB933, 2SB934, 2SB935, 2SB935A, 2SB936, 2SB936A
