2SB957 - Даташиты. Аналоги. Основные параметры

Transistor 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SD1280 1.5 0.1 4.5 0.1 Features 1.6 0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga-

Power Transistors 2SB953, 2SB953A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1444 and 2SD1444A Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with 3.1 0.1 one screw Absolute Maximum Ratings (TC=

Power Transistors 2SB954, 2SB954A Silicon PNP epitaxial planar type For power amplification Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.2 Low collector to emitter saturation voltage VCE(sat) 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with one screw 3.1 0.1 Absolute Maximum R

Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington Unit mm 10.0 0.2 4.2 0.2 For power amplification and switching 5.5 0.2 2.7 0.2 Complementary to 2SD1276 and 2SD1276A Features 3.1 0.1 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 A

Power Transistors 2SB0952 (2SB952), 2SB0952A (2SB952A) Silicon PNP epitaxial planar type For low-voltage switching Unit mm 8.5 0.2 3.4 0.3 Features 6.0 0.2 1.0 0.1 Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 0

Power Transistors 2SB951, 2SB951A Silicon PNP epitaxial planar type Darlington For midium-speed switching Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SD1277 and 2SD1277A 5.5 0.2 2.7 0.2 Features 3.1 0.1 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Maxim

Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) Silicon PNP epitaxial planar type darlington Unit mm For power amplification and switching 10.0 0.2 4.2 0.2 Complementary to 2SD1276 and 2SD1276A 5.5 0.2 2.7 0.2 Features 3.1 0.1 High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with on

Transistor 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SD1280 1.5 0.1 4.5 0.1 Features 1.6 0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga-

2SB955(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1126(K) Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.0 k 200 2 3 (Typ) (Typ) 3 2SB955(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base

JMnic Product Specification Silicon PNP Power Transistors 2SB954 2SB954A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT

JMnic Product Specification Silicon PNP Power Transistors 2SB953 2SB953A DESCRIPTION With TO-220Fa package Complement to type 2SD1444/1444A High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNI

SMD Type Transistors PNP Transistors 2SB956 1.70 0.1 Features Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Complementary to 2SD1280 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCE

isc Silicon PNP Darlington Power Transistor 2SB955 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -5A CE(sat) C Complement to Type 2SD1126 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

isc Silicon PNP Power Transistor 2SB953 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max)@I = -5A CE(sat) C High Speed Switching Complement to Type 2SD1444 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

isc Silicon PNP Power Transistor 2SB954 DESCRIPTION Low Collector Saturation Voltage- V = -1.0V(Max)@I = -1A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO

isc Silicon PNP Darlington Power Transistor 2SB950A DESCRIPTION High DC Current Gain- h = 2000(Min.)@I = -3A FE C High Speed Switching Complement to Type 2SD1276A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA