2SB963 - Даташиты. Аналоги. Основные параметры

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB963 DESCRIPTION With TO-251(IPAK) packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to type 2SD1286 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control El

DATA SHEET SILICON POWER TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) PACKAGE DRAWING (Unit mm) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid 6.5 0.2 Integrated Circuits. 5.0 0.2 2.3 0.2 0.5 0.1 4.4 0.2 Note Note FEATURES 4 High Gain hFE = 2000 to 3000 Complement to 2SD1286-Z 1 2 3

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB963-Z DESCRIPTION With TO-252(DPAK) packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to type 2SD1286-Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control

Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit mm 6.5 0.1 2.3 0.1 5.3 0.1 For low-frequency power amplification 4.35 0.1 0.5 0.1 Features 1.0 0.1 0.1 0.05 0.93 0.1 Possible to solder the radiation fin directly to printed cicuit board 0.5 0.1 0.75 0.1 Low collector to emitter saturation voltage VCE(sat) 2.3 0.1 4.6 0.1 Large collecto

Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit mm 6.5 0.1 2.3 0.1 5.3 0.1 For low-frequency output amplification 4.35 0.1 0.5 0.1 Complementary to 2SD1295 Features 1.0 0.1 0.1 0.05 0.93 0.1 Possible to solder the radiation fin directly to printed cicuit board 0.5 0.1 0.75 0.1 High collector to emitter VCEO 2.3 0.1 4.6 0.1 Large col

JMnic Product Specification Silicon PNP Power Transistors 2SB966 DESCRIPTION With TO-3PFa package Complement to type 2SD1289 APPLICATIONS For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitte

SMD Type Transistors PNP Transistors 2SB962-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat). 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base

SMD Type Transistors PNP Transistors 2SB967 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 Large collector current Ic Low collector to emitter saturation voltage VCE(sat). 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol

SMD Type Transistors PNP Transistors 2SB968 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High collector to emitter VCEO Large collector power dissipation PC Complementary to 2SD1295 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB962-Z DESCRIPTION Low Collector Saturation Voltage V = -0.3V(Typ)@I = -2.0A CE(sat) C PNP silicon epitaxial transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SB962-Z is designed for Audio frequency amplifier and switching ,especia

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB965 DESCRIPTION Low Collector Saturation Voltage V = -0.55V(Typ)@I = -4.0A CE(sat) C Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD1288 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency po

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB966 DESCRIPTION Low Collector Saturation Voltage V = -0.65V(Typ)@I = -5.0A CE(sat) C Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD1289 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency po