Биполярный транзистор 2SB968 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB968
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 75 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO218
2SB968 Datasheet (PDF)
2sb968.pdf
Power Transistors2SB968Silicon PNP epitaxial planar typeUnit: mm6.5 0.12.3 0.15.3 0.1For low-frequency output amplification4.35 0.10.5 0.1Complementary to 2SD1295Features1.0 0.10.1 0.050.93 0.1Possible to solder the radiation fin directly to printed cicuit board0.5 0.10.75 0.1High collector to emitter VCEO2.3 0.1 4.6 0.1Large col
2sb968.pdf
SMD Type TransistorsPNP Transistors2SB968TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High collector to emitter VCEO Large collector power dissipation PC Complementary to 2SD12950.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25
2sb963-z.pdf
DATA SHEETSILICON POWER TRANSISTOR2SB963-ZPNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid 6.5 0.2Integrated Circuits. 5.0 0.22.3 0.20.5 0.14.4 0.2NoteNoteFEATURES 4 High Gain hFE = 2000 to 3000 Complement to 2SD1286-Z 1 2 3
2sb967.pdf
Power Transistors2SB967Silicon PNP epitaxial planar typeUnit: mm6.5 0.12.3 0.15.3 0.1For low-frequency power amplification4.35 0.10.5 0.1Features1.0 0.10.1 0.050.93 0.1Possible to solder the radiation fin directly to printed cicuit board0.5 0.10.75 0.1Low collector to emitter saturation voltage VCE(sat)2.3 0.1 4.6 0.1Large collecto
2sb966.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB966 DESCRIPTION With TO-3PFa package Complement to type 2SD1289 APPLICATIONS For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitte
2sb962-z.pdf
SMD Type TransistorsPNP Transistors2SB962-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat).0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base
2sb967.pdf
SMD Type TransistorsPNP Transistors2SB967TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features 5.30-0.2 +0.80.50 -0.7 Large collector current Ic Low collector to emitter saturation voltage VCE(sat).0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol
2sb962-z.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB962-ZDESCRIPTIONLow Collector Saturation Voltage: V = -0.3V(Typ)@I = -2.0ACE(sat) CPNP silicon epitaxial transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB962-Z is designed for Audio frequency amplifierand switching ,especia
2sb965.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB965DESCRIPTIONLow Collector Saturation Voltage: V = -0.55V(Typ)@I = -4.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD1288100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency po
2sb966.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB966DESCRIPTIONLow Collector Saturation Voltage: V = -0.65V(Typ)@I = -5.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD1289100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency po
2sb963.pdf
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB963DESCRIPTIONWith TO-251(IPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SD1286Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlEl
2sb963-z.pdf
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB963-ZDESCRIPTIONWith TO-252(DPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SD1286-ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor control
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050