2SB968 Specs and Replacement
Type Designator: 2SB968
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO218
- BJT ⓘ Cross-Reference Search
2SB968 datasheet
..1. Size:53K panasonic
2sb968.pdf 
Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit mm 6.5 0.1 2.3 0.1 5.3 0.1 For low-frequency output amplification 4.35 0.1 0.5 0.1 Complementary to 2SD1295 Features 1.0 0.1 0.1 0.05 0.93 0.1 Possible to solder the radiation fin directly to printed cicuit board 0.5 0.1 0.75 0.1 High collector to emitter VCEO 2.3 0.1 4.6 0.1 Large col... See More ⇒
..2. Size:1121K kexin
2sb968.pdf
SMD Type Transistors PNP Transistors 2SB968 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High collector to emitter VCEO Large collector power dissipation PC Complementary to 2SD1295 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 ... See More ⇒
9.3. Size:664K nec
2sb963-z.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) PACKAGE DRAWING (Unit mm) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid 6.5 0.2 Integrated Circuits. 5.0 0.2 2.3 0.2 0.5 0.1 4.4 0.2 Note Note FEATURES 4 High Gain hFE = 2000 to 3000 Complement to 2SD1286-Z 1 2 3 ... See More ⇒
9.4. Size:43K panasonic
2sb967.pdf
Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit mm 6.5 0.1 2.3 0.1 5.3 0.1 For low-frequency power amplification 4.35 0.1 0.5 0.1 Features 1.0 0.1 0.1 0.05 0.93 0.1 Possible to solder the radiation fin directly to printed cicuit board 0.5 0.1 0.75 0.1 Low collector to emitter saturation voltage VCE(sat) 2.3 0.1 4.6 0.1 Large collecto... See More ⇒
9.6. Size:153K jmnic
2sb966.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB966 DESCRIPTION With TO-3PFa package Complement to type 2SD1289 APPLICATIONS For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitte... See More ⇒
9.7. Size:903K kexin
2sb962-z.pdf
SMD Type Transistors PNP Transistors 2SB962-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat). 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base... See More ⇒
9.8. Size:960K kexin
2sb967.pdf
SMD Type Transistors PNP Transistors 2SB967 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 Large collector current Ic Low collector to emitter saturation voltage VCE(sat). 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol ... See More ⇒
9.9. Size:191K inchange semiconductor
2sb962-z.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB962-Z DESCRIPTION Low Collector Saturation Voltage V = -0.3V(Typ)@I = -2.0A CE(sat) C PNP silicon epitaxial transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SB962-Z is designed for Audio frequency amplifier and switching ,especia... See More ⇒
9.10. Size:205K inchange semiconductor
2sb965.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB965 DESCRIPTION Low Collector Saturation Voltage V = -0.55V(Typ)@I = -4.0A CE(sat) C Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD1288 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency po... See More ⇒
9.11. Size:205K inchange semiconductor
2sb966.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB966 DESCRIPTION Low Collector Saturation Voltage V = -0.65V(Typ)@I = -5.0A CE(sat) C Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD1289 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency po... See More ⇒
9.12. Size:192K inchange semiconductor
2sb963.pdf
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB963 DESCRIPTION With TO-251(IPAK) packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to type 2SD1286 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control El... See More ⇒
9.13. Size:217K inchange semiconductor
2sb963-z.pdf
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB963-Z DESCRIPTION With TO-252(DPAK) packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to type 2SD1286-Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control ... See More ⇒
Detailed specifications: 2SB96, 2SB960, 2SB962, 2SB963, 2SB964, 2SB965, 2SB966, 2SB967, BD335, 2SB969, 2SB97, 2SB970, 2SB971, 2SB972, 2SB973, 2SB974, 2SB975
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