Биполярный транзистор 2SC1117H
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC1117H
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 20
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3
V
Макcимальный постоянный ток коллектора (Ic): 0.02
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 500
MHz
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора:
TO72
Аналоги (замена) для 2SC1117H
2SC1117H
Datasheet (PDF)
8.1. Size:142K jmnic
2sc1116.pdf JMnic Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
8.2. Size:176K inchange semiconductor
2sc1115.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1115DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
8.3. Size:177K inchange semiconductor
2sc1111.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1111DESCRIPTIONWith TO-3 PackageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
8.4. Size:176K inchange semiconductor
2sc1112.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1112DESCRIPTIONWith TO-3 PackageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
8.5. Size:176K inchange semiconductor
2sc1114.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1114DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
8.6. Size:180K inchange semiconductor
2sc1113.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1113DESCRIPTIONHigh Current CapacityWide area of safe operationMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in audio frequency power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
8.7. Size:177K inchange semiconductor
2sc1116.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1116DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
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