2SC1136 - описание и поиск аналогов

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V Collector current IC 2.5 A Collector peak current

2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier Emitter Collector Base CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D A B E Range 60 120 100 200 160 320 F C N H L M K D J G

NPN TRIPLE DIFFUSED 2SC1172 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC1162 TRANSISTOR (NPN) TO-126 FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECOTR 3. BASE Equivalent Circuit C1162=Device code Solid dot = Green molding compound device, if none, the normal device C1162 XX XX=Code ORDERING INFORMATION Part Number Package

JMnic Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Ab

JMnic Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For use in color TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAME

JMnic Product Specification Silicon NPN Power Transistors 2SC1106 DESCRIPTION With TO-3 package High power dissipation High breakdown voltage APPLICATIONS For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings

JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION With TO-126 package Complement to type 2SA715 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base

JMnic Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALU

JMnic Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION With TO-220 package Complement to type 2SA473 Collector current IC=3A Collector dissipation PC=10W@TC=25 APPLICATIONS Low frequency power amplifier Power regulator PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (T

JMnic Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

Transistors 2SC1187

2SC1162(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 Low frequency power amplifier 2.900 1.100 7.800 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 VCBO Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V 2.100

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1195 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1108 DESCRIPTION Low Collector Saturation Voltage High Current 4A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1172 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1115 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1111 DESCRIPTION With TO-3 Package Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1106 DESCRIPTION With TO-3 Package High power dissipation High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For voltage regulators,switching mode power supply applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1112 DESCRIPTION With TO-3 Package Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

isc Silicon NPN Power Transistor 2SC1162 DESCRIPTION High Collector Current I = 2.5A C Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Complement to Type 2SA715 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1185 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1170 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMET

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1114 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1140 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1161 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for low frequency high voltage power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1173 DESCRIPTION Low Collector Saturation Voltage Complement to Type 2SA473 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1157 DESCRIPTION With TO-202 package High transition frequency Complement to type 2SA647 APPLICATIONS For power amplifier switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1113 DESCRIPTION High Current Capacity Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1141 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1116 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1102 DESCRIPTION With TO-66 package High Voltage High transistor frequency Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in color TV video output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1163 DESCRIPTION High Collector Current I = 0.1A C Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for low frequency power amplifier appl