2SC1598 datasheet, аналоги, основные параметры
Наименование производителя: 2SC1598 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 6 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 2000 MHz
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hFE): 180
Корпус транзистора: TO128
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Аналоги (замена) для 2SC1598
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2SC1598 даташит
2sc1518 e.pdf
Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders Unit mm For DC-DC converter 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol
2sc1567.pdf
Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0794, 2SA0794A 3.16 0.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier TO-126B package which requires no insulati
2sc1573.pdf
Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit mm For small TV video output 5.9 0.2 4.9 0.2 Complementary to 2SC1573 and 2SA879 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) 0.7 0.1 Parameter Symbol Ratings Unit 2.54 0
2sc1509 e.pdf
Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA777 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo
2sc1573 e.pdf
Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit mm For small TV video output 5.9 0.2 4.9 0.2 Complementary to 2SC1573 and 2SA879 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) 0.7 0.1 Parameter Symbol Ratings Unit 2.54 0
2sc1568.pdf
Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0900 3.16 0.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances and high efficiency with a low- voltage power supply TO-126B package which incorporate
2sc1518.pdf
Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders Unit mm For DC-DC converter 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol
2sc1509.pdf
Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA777 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo
2sc1515.pdf
2SC1515(K) Silicon NPN Triple Diffused Application High voltage switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1515 (K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCES 200 V VCEO 150 V Emitter to base voltage VEBO 5V Collector current IC 50 mA Collector power dissipat
2sc1520.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1520 DESCRIPTION With TO-202 package High voltage High transition frequency APPLICATIONS For color TV chroma output and video output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta
2sc1505 1.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1
2sc1505.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outl
2sc1507.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PAR
2sc1573-a 3da1573-a.pdf
2SC1573(3DA1573) 2SC1573A(3DA1573A) NPN /SILICON NPN TRANSISTOR Purpose General amplifier and video frequency output in small screen TV. ,f , 2SA879(3CA879) T Features High V , high f ; Complementary pair with 2SA879(3CA879). CEO T /Absolute maximum rati
2sc1504.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1504 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 4
2sc1567 2sc1567a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION With TO-126 package Complement to type 2SA794/794A High collector to emitter voltage VCEO APPLICATIONS For low-frequency high power driver applications Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION
2sc1580.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1580 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1514.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1514 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= 300V(Min) Good Linearity of hFE Low Saturation Voltage APPLICATIONS Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMET
2sc1576.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1576 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1579.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1579 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1567.pdf
isc Silicon NPN Power Transistor 2SC1567 DESCRIPTION Collector-Emitter Breakdown Voltage V = 100V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA794 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency high power driver. Optimum for the driver stage of low-frequency and 40W to 100W output
2sc1516.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1516 DESCRIPTION High Collector Current I = 1.5A C Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. AB
2sc1501.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501 DESCRIPTION With TO-126 package High breakdown voltage Large power dissipation APPLICATIONS For medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base
2sc1586.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1586 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1505.pdf
isc Silicon NPN Power Transistor 2SC1505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 50mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV chroma output Circuits and sound output circui
2sc1585.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1585 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1568.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1568 DESCRIPTION Silicon NPN epitaxial planar type Low Collector-Emitter Breakdown Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage type medium output power amplifications ABSOLUTE MAXIMUM
2sc1584.pdf
isc Silicon NPN PowerTransistor 2SC1584 DESCRIPTION High Power Dissipation- P = 150W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Complement to Type 2SA907 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T
2sc1569.pdf
isc Silicon NPN Power Transistor 2SC1569 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO DC Current Gain- h = 40-170 @I = 50mA, V = 10V FE C CE High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output applications. ABSOLUTE MAXIMUM
2sc1507.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1507 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 50mA CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color T
2sc1520.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1520 DESCRIPTION With TO-202 package High voltage High transition frequency APPLICATIONS For color TV chroma output and video output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=2
2sc1577.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1577 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1507-to220f.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220F package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.
Другие транзисторы: 2SC1590, 2SC1591, 2SC1592, 2SC1593, 2SC1594, 2SC1595, 2SC1596, 2SC1597, BC557, 2SC1599, 2SC16, 2SC160, 2SC1600, 2SC1601, 2SC1602, 2SC1603, 2SC1604
Параметры биполярного транзистора и их взаимосвязь
History: 2SC1597 | 2SC1594
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