2SC1607 datasheet, аналоги, параметры транзистора

2SC1607 datasheet, аналоги, основные параметры

Наименование производителя: 2SC1607 📄📄

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.18 W

Макcимально допустимое напряжение коллектор-база (Ucb): 40 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 125 °C

Электрические характеристики

Ёмкость коллекторного перехода (Cc): 8 pf

Статический коэффициент передачи тока (hFE): 50

Корпус транзистора: TO72

📄📄 Копировать

Аналоги (замена) для 2SC1607

- подборⓘ биполярного транзистора по параметрам

2SC1607 даташит

8.1. Size:177K inchange semiconductor
2sc1609.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1609 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

9.1. Size:198K 1
2sc1613.pdf pdf_icon

9.2. Size:51K 1
2sc1636 2sc1637.pdf pdf_icon

9.3. Size:315K 1
2sc1652m 2sc4016.pdf pdf_icon

9.4. Size:207K 1
2sc1615 2sc4036.pdf pdf_icon

9.5. Size:311K 1
2sc1652 2sc4037.pdf pdf_icon

9.6. Size:61K toshiba
2sc1678.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.7. Size:153K toshiba
2sc1617.pdf pdf_icon

9.8. Size:210K toshiba
2sc1627.pdf pdf_icon

2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit mm Voltage Amplifier Applications Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO

9.9. Size:90K toshiba
2sc1624 2sc1625.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.10. Size:170K toshiba
2sc1627a.pdf pdf_icon

9.11. Size:298K nec
2sc1674.pdf pdf_icon

9.12. Size:163K nec
2sc1653 2sc1654.pdf pdf_icon

9.13. Size:42K nec
2sc1675.pdf pdf_icon

9.14. Size:234K nec
2sc1622a.pdf pdf_icon

9.15. Size:60K nec
2sc1623.pdf pdf_icon

DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS High DC Current Gain hFE = 200 TYP. in millimeters (VCE = 6.0 V, IC = 1.0 mA) 2.8 0.2 High Voltage VCEO = 50 V 1.5 0.65+0.1 0.15 ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (TA = 25 C) 2 Collector to

9.16. Size:229K nec
2sc1621.pdf pdf_icon

9.17. Size:99K rohm
2sc1545m 2sc1645.pdf pdf_icon

9.18. Size:52K rohm
2sb852k 2sa830s 2sd1383k 2sc1645s.pdf pdf_icon

2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a

9.19. Size:34K rohm
2sa821s 2sc1651s.pdf pdf_icon

2SA821S Transistors Transistors 2SC1651S (94L-183-A35) (94L-519-C35) 274

9.20. Size:207K rohm
2sc1615.pdf pdf_icon

9.21. Size:311K rohm
2sc1652.pdf pdf_icon

9.22. Size:585K mcc
2sc1623.pdf pdf_icon

2SC1623 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Epitaxial Transistors Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 to +15

9.23. Size:326K mcc
2sc1623-l5-l6-l7.pdf pdf_icon

2SC1623-L5 MCC Micro Commercial Components TM 2SC1623-L6 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC1623-L7 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) High DC Cu

9.24. Size:56K panasonic
2sc1688 e.pdf pdf_icon

Transistor 2SC1688 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Small common emitter reverse transfer capacitance Cre. High transition frequency fT. Center at the emitter pin. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 50 V 1.27 1.27

9.25. Size:39K no
2sc1683.pdf pdf_icon

9.26. Size:55K no
2sc1684.pdf pdf_icon

9.27. Size:37K no
2sc1686.pdf pdf_icon

9.28. Size:48K no
2sc1687.pdf pdf_icon

9.29. Size:433K secos
2sc1654.pdf pdf_icon

2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High Frequency Power Amplifier Application A L Power Switching Applications 3 3 Top View C B CLASSIFICATION OF hFE(1) 1 1 2 2 K E Product-Rank 2SC1654-N5 2SC1654-N6 2SC1654-N7 Range 90 180 1

9.30. Size:78K secos
2sc1674.pdf pdf_icon

2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Switching and Amplification G H Emitter Collector Base J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BL B A 4.40 4

9.31. Size:492K secos
2sc1623k.pdf pdf_icon

2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High DC current gain hFE=200(Typ), VCE=6V, IC=1mA. A L High Voltage VCEO=50V. 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B Range 90

9.32. Size:77K secos
2sc1675.pdf pdf_icon

2SC1675 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Collector Current G H General Purpose Switching and Amplification Emitter Base J Collector A D CLASSIFICATION OF hFE Millimeter B REF. Min. Max. Product-Rank 2SC1675-R 2SC1

9.33. Size:1269K jiangsu
2sc1623.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector

9.34. Size:77K microelectronics
2sc1675.pdf pdf_icon

9.35. Size:112K microelectronics
2sc1626 2sa816.pdf pdf_icon

9.36. Size:108K transys
2sc1674.pdf pdf_icon

Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURE Power dissipation 1. EMITTER PCM 0. 25 W (Tamb=25 ) 2. COLLECTOR Collector current 3. BASE ICM 0.02 A . 1 2 3 Collector-base voltage V(BR)CBO 30 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECT

9.37. Size:452K htsemi
2sc1654.pdf pdf_icon

2SC1654 TRANSISTOR(NPN) SOT 23 FEATURES High Frequency Power Amplifier Application Power Swithing Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 180 V CBO V Collector-Emitter Voltage 160 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 50 mA PC C

9.38. Size:552K htsemi
2sc1623.pdf pdf_icon

2SC1623 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -Continuous 100 mA

9.39. Size:273K gsme
2sc1623.pdf pdf_icon

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM1623 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 50 Vdc - C

9.40. Size:224K lge
2sc1623 sot-23.pdf pdf_icon

2SC1623 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage Dimensions in inches and (millimeters) 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V I

9.41. Size:231K lge
2sc1627a to-92mod.pdf pdf_icon

2SC1627A TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Complementary to 2SA817A 8.400 Driver Stage Application of 30 to 35 Watts Amplifiers 8.800 0.900 1.100 0.400 MAXIMUM RATINGS(TA=25 unless otherwise noted) 0.600 13.800 14.200 Symbol parameter Value Units VCBO 80 V Collector-Base Voltage 1.500 TYP

9.42. Size:191K lge
2sc1675.pdf pdf_icon

2SC1675(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features 2SC1675 is designed for use in AM converter AM/FM if amplifier and local oscillator of AM/FM tuner MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeter

9.43. Size:204K wietron
2sc1623.pdf pdf_icon

2SC1623 NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current - Continuous 150 mA Total Device Dissipation FR-5 Board PD 225 mW TA=25 C 1.8 mW/ C Derate above 25 C R JA Thermal Resistance,

9.44. Size:373K willas
2sc1623xlt1.pdf pdf_icon

FM120-M WILLAS 2SC1623xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize b

9.45. Size:258K shenzhen
2sc1623.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain hFE=200(Typ)VCE=6V, IC=1mA 2. EMITTER High voltage VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage 50 V VCEO Collector

9.46. Size:284K can-sheng
2sc1623 sot-23.pdf pdf_icon

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) FEATURES High voltage Vceo=50V MARKING L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base V

9.47. Size:1530K blue-rocket-elect
2sc1623t.pdf pdf_icon

2SC1623T(BR3DG1623T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features h , V 2SA812T(BR3CG812T) FE CEO, High hFE and VCEO, complementary pair with 2SA812T(BR3CG812T). / Applications Audio frequency general amp

9.48. Size:498K blue-rocket-elect
2sc1627af.pdf pdf_icon

2SC1627AF(BR3DG1627AF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 30 35W 2SA817AF(BR3CG817AF) Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(BR3CG817AF). / Applications

9.49. Size:1113K blue-rocket-elect
2sc1674.pdf pdf_icon

9.50. Size:1122K blue-rocket-elect
2sc1623w.pdf pdf_icon

2SC1623W(BR3DG1623W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features h , V 2SA812W(BR3CG812W) FE CEO, High hFE and VCEO, complementary pair with 2SA812W(BR3CG812W). / Applications Audio frequency general a

9.51. Size:1528K blue-rocket-elect
2sc1623.pdf pdf_icon

9.52. Size:308K lrc
l2sc1623swt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free packkage is available L2SC1623SWT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 L2SC1623SWT1G L7 3000/Tape&Reel 10000/Tape&Reel L2SC1623SWT3G L7 1 2 MAXIMUM RATINGS SC-70 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V 3 COLLECTOR Emitter-Base Volt

9.53. Size:318K lrc
l2sc1623qlt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G

9.54. Size:282K lrc
l2sc1623rlt1g.pdf pdf_icon

9.55. Size:282K lrc
l2sc1623qlt3g l2sc1623rlt3g l2sc1623slt3g l2sc1623qlt1g l2sc1623rlt1g l2sc1623slt1g.pdf pdf_icon

9.56. Size:282K lrc
l2sc1623qlt1g l2sc1623rlt1g l2sc1623slt1g.pdf pdf_icon

9.57. Size:280K lrc
l2sc1623slt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G General Purpose Transistors Series Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC1623QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1

9.58. Size:1222K kexin
2sc1654.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SC1654 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=160V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Colle

9.59. Size:901K kexin
2sc1653.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SC1653 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=130V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Colle

9.60. Size:978K kexin
2sc1623.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SC1623 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High DC Current Gain 1 2 hFE = 200 TYP. +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 VCE = 6.0 V, IC = 1.0 mA High Voltage VCE O = 50 V 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Colle

9.61. Size:1489K kexin
2sc1621.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SC1621 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect

9.62. Size:270K galaxy
2sc1623.pdf pdf_icon

9.63. Size:563K slkor
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf pdf_icon

2SC1623 TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -C

9.64. Size:551K umw-ic
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf pdf_icon

R UMW UMW 2SC1623 SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitte

9.65. Size:3470K anbon
2sc1623.pdf pdf_icon

2SC1623 Plastic-Encapsulate Transistors NPN Silicon FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V SOT-23 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER 3. COLLECTOR VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Curren

9.66. Size:1794K fms
2sc1623.pdf pdf_icon

SOT-23 Plastic-Encapsulate Transistors Formosa MS 2SC1623 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA SOT-23 High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER 3. COLLECTOR VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Vol

9.67. Size:1376K mdd
2sc1623.pdf pdf_icon

2SC1623 SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) SOT-23 FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO VEBO Emitter-Base Voltage 5

9.68. Size:4152K msksemi
2sc1623-ms.pdf pdf_icon

www.msksemi.com 2SC1623-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA 1. BASE High voltage VCEO=50V 2. EMITTER SOT 23 3. COLLECTOR CLASSIFICATION OF hFE Rank L4 L5 L6 L7 Range 90-180 135-270 200-400 300-600 Marking L4 L5 L6 L7 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parame

9.69. Size:207K powersilicon
2sc1623l4-t3 2sc1623l5-t3 2sc1623l6-t3 2sc1623l7-t3.pdf pdf_icon

2SC1623 PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current Gain hFE=200(Typ.) VCE=6V, IC=1mA High Voltage VCEO = 50V MECHANICAL DATA Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623 - -T3 SOT-23 Tape Reel See Classifica

9.70. Size:1162K cn evvo
2sc1623-l4 2sc1623-l5 2sc1623-l6 2sc1623-l7.pdf pdf_icon

2SC1623 NPN Transistors 3 Features 2 1.Base High DC Current Gain 2.Emitter hFE = 200 TYP. 1 3.Collector VCE = 6.0 V, IC = 1.0 mA Simplified outline(SOT-23) High Voltage VCE O = 50 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current (D

9.71. Size:909K cn salltech
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf pdf_icon

9.72. Size:784K cn shandong jingdao microelectronics
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf pdf_icon

Jingdao Microelectronics co.LTD 2SC1623 2SC1623 SOT-23 NPN TRANSISTOR 3 FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1.BASE Symbol Parameter Value Unit 2.EMITTER 3.COLLECTOR Collector Base Voltage VCBO 60 V Collector Emit

9.73. Size:913K cn puolop
2sc1623-l4 2sc1623-l5 2sc1623-l6 2sc1623-l7.pdf pdf_icon

9.74. Size:1126K cn shikues
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf pdf_icon

9.75. Size:914K cn yongyutai
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf pdf_icon

2SC1623 SOT 323 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 m

9.76. Size:919K cn yongyutai
2sc1623.pdf pdf_icon

9.77. Size:2547K cn twgmc
2sc1623.pdf pdf_icon

2SC1623 2SC1623 2SC1623 2SC1623 2SC1623 TRANSISTOR(NPN) FEATURE SOT-23 High DC current gain hFE=200(Typ)VCE=6V, IC=1mA 1 BASE High voltage VCEO=50V 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Co

9.78. Size:814K cn yangzhou yangjie elec
2sc1623-l5 2sc1623-l6 2sc1623-l7.pdf pdf_icon

RoHS RoHS COMPLIANT COMPLIANT 2SC1623 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix HF Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-23 P Terminals Tin plated leads, solderable per

9.79. Size:400K cn cbi
2sc1623w.pdf pdf_icon

1 2SC1623W TRANSISTOR (NPN) FEATURE SOT- 323 High DC current gain h =200(Typ)V =6V, I =1mA FE CE C High voltage V =50V CEO MARKING L6 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V CBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V I Collector Current -Continuous 100 mA C P Collector Power

9.80. Size:450K cn cbi
2sc1623.pdf pdf_icon

2SC1623 TRANSISTOR (NPN) FEATURE SOT-23 High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V 1 BASE 2 EMITTER 3 COLLECTOR MARKING L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti

9.81. Size:991K cn fosan
2sc1623.pdf pdf_icon

9.82. Size:272K cn goodwork
2sc1623.pdf pdf_icon

9.83. Size:1222K cn hottech
2sc1623.pdf pdf_icon

2SC1623 BIPOLAR TRANSISTOR (NPN) FEATURES High DC current gain h =200(Typ) V =6V,I =1mA FE CE C High voltage V =50V CEO Surface Mount device Complementary to 2SA812 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe

9.84. Size:617K cn xch
2sc1623-l4 2sc1623-l5 2sc1623-l6 2sc1623-l7.pdf pdf_icon

Features A SOT-23 L6 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 Maximum Ratings @ T = 25 C unless otherwise specified A J J 0.013 0.1

9.85. Size:190K inchange semiconductor
2sc1625.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1625 DESCRIPTION Silicon NPN planar type Complementary to 2SA815 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

9.86. Size:177K inchange semiconductor
2sc1610.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1610 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

9.87. Size:191K inchange semiconductor
2sc1624.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1624 DESCRIPTION Silicon NPN planar type Complementary to 2SA814 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

9.88. Size:189K inchange semiconductor
2sc1683.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1683 DESCRIPTION Silicon NPN triple diffused mesa High breakdown voltage Large collector dissipation Complementary pair with 2SA843 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifier Color TV vertical deflection output ABSO

9.89. Size:185K inchange semiconductor
2sc1678.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1678 DESCRIPTION Silicon NPN planar type High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

9.90. Size:191K inchange semiconductor
2sc1626.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1626 DESCRIPTION Silicon NPN planar type Complementary to 2SA816 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

9.91. Size:178K inchange semiconductor
2sc1617.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1617 DESCRIPTION Silicon NPN triple diffused type High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Black and white TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

9.92. Size:177K inchange semiconductor
2sc1672.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1672 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

9.93. Size:66K inchange semiconductor
2sc1624 2sc1625.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION With TO-220 package Complement to type 2SA814/815 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum

9.94. Size:178K inchange semiconductor
2sc1618.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1618 DESCRIPTION High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

9.95. Size:178K inchange semiconductor
2sc1619.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1619 DESCRIPTION High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

9.96. Size:177K inchange semiconductor
2sc1667.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1667 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

9.97. Size:215K inchange semiconductor
2sc1623.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1623 DESCRIPTION SOT-23 plastic-encapsulate transistors High DC current gain h =200(TYP) FE @V = 6V, I = 1mA CE C High voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

Другие транзисторы: 2SC1600, 2SC1601, 2SC1602, 2SC1603, 2SC1604, 2SC1605, 2SC1605A, 2SC1606, BC327, 2SC1608, 2SC1609, 2SC161, 2SC1610, 2SC1613, 2SC1614, 2SC1615, 2SC1617

2SC1607 datasheet и подбор замены

2SC1607 datasheet, аналоги, основные параметры

Предельные значения

Электрические характеристики

2SC1607 даташит

Список транзисторов

Обновления

Popular searches

AllTransistors(C)