2SC1790 datasheet, аналоги, основные параметры
Наименование производителя: 2SC1790 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.015 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3000 MHz
Ёмкость коллекторного перехода (Cc): 1.2 pf
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO72
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Аналоги (замена) для 2SC1790
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2SC1790 даташит
9.4. Size:53K sanyo
2sc1755.pdf 
Ordering number EN429E NPN Triple Diffused Planar Silicon Transistor 2SC1755 TV Chroma, Video, Audio Output Applications Package Dimensions unit mm 2010C [2SC1755] JEDEC TO-220AB 1 Base EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 300 V Collector-to-Emitter
9.6. Size:70K rohm
2sc1741s.pdf 
2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC1741S Features External dimensions (Units mm) 1) High ICMax. 2SC1741S ICMax. = 0.5A 2) Low VCE(sat). 4 0.2 2 0.2 Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. 0.45+0.15 -0.05 Structure Epitaxial planar type 0.45+0.15 2.5+0.4 0.5 -0.05 -0.1 5 NPN silicon tra
9.8. Size:171K rohm
2sc2412k 2sc4081 2sc4617 2sc5658 2sc1740s.pdf 
General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN
9.9. Size:74K rohm
2sc1741.pdf 
2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC2411K / 2SC4097 / 2SC1741S Features External dimensions (Units mm) 1) High ICMax. 2SC2411K 2SC4097 ICMax. = 0.5mA 2.9 0.2 2) Low VCE(sat). 1.1+0.2 2.0 0.2 1.9 0.2 -0.1 1.3 0.1 0.9 0.1 0.8 0.1 0.95 0.95 Optimal for low voltage operation. 0.65 0.65 0.7 0.1 0.2 (1) (2) (1) (2) 3) Complemen
9.10. Size:323K mcc
2sc1740s-q-r-s.pdf 
MCC Micro Commercial Components 2SC1740S-Q TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC1740S-R Phone (818) 701-4933 2SC1740S-S Fax (818) 701-4939 Features Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisture Sensitivity
9.15. Size:36K hitachi
2sc1775.pdf 
2SC1775, 2SC1775A Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA872/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1775, 2SC1775A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC1775 2SC1775A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltag
9.21. Size:294K secos
2sc1740s.pdf 
2SC1740S 0.15A , 60V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Low Cob CLASSIFICATION OF hFE Millimeter REF. Min. Max. A 3.90 4.10 Product-Rank 2SC1740S-Q 2SC1740S-R 2SC1740S-S B 3.05 3.25 C 1.42 1.62 Range 120 270 180 390 270 560 D 15.1 15.5 E 2.9
9.22. Size:511K jiangsu
2sc1740s.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC1740S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Low Cob 2. COLLECTOR 3. BASE Equivalent Circuit C1740 C1740=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORMATION Part Number Package Packing Method Pack
9.23. Size:110K jiangsu
2sc1741s.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC1741S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High IC 3. BASE Low VCE(sat). Optimal for Low Voltage Operation Complements the 2SA854S MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Col
9.24. Size:637K jiangsu
2sc1766.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC1766 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Speed Switching Time 3. EMITTER Low Collector-emitter saturation voltage APPLICATIONS Power Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector
9.25. Size:181K jmnic
2sc1755.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC1755 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volt
9.26. Size:184K jmnic
2sc1756.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC1756 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
9.27. Size:372K htsemi
2sc1766.pdf 
2SC1766 SOT-89-3L TRANSISTOR(NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER APPLICATIONS Power Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage
9.28. Size:223K lge
2sc1740s to-92s.pdf 
2SC1740S TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features Low Cob MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current Continuous 150 mA PC Collector Power Dissipation 300 mW TJ Junction Te
9.29. Size:356K willas
2sc1766.pdf 
FM120-M WILLAS THRU 2SC1766 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features TRANSISTOR (NPN) Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOT-89 FEATURES SOD-123H Low profile surface
9.30. Size:811K blue-rocket-elect
2sc1740m.pdf 
2SC1740M(BR3DG1740M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , 2SA933M(BR3CG933M) Small base output capacitance, complementary pair with 2SA933M(BR3CG933M). / Applications General purpose a
9.31. Size:852K blue-rocket-elect
2sc1741am.pdf 
2SC1741AM(BR3DG1741AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,V CE(sat) High IC, Low VCE(sat) / Applications Medium power transistor. / Equivalent Circuit
9.32. Size:128K chenmko
2sc1766gp.pdf 
CHENMKO ENTERPRISE CO.,LTD 2SC1766GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time tstg= 1.0uSec (typ.) C * PC= 1.0 to 2.0W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. * High sat
9.33. Size:209K sunroc
2sc1740s.pdf 
SUNROC 2SC1740S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Low Cob 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 3. BASE VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V 1 2 3 VEBO Emitter-Base Voltage 7 V IC Collector Current Continuous 150 mA PC Collector Power Dissipation 300 mW TJ Junction
9.34. Size:196K inchange semiconductor
2sc1755.pdf 
isc Silicon NPN Power Transistor 2SC1755 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO DC Current Gain- h = 40-200 @I = 10mA, V = 10V FE C CE High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma, video , audio output applications. A
9.35. Size:184K inchange semiconductor
2sc1723.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1723 DESCRIPTION Silicon NPN triple diffused LTP High breakdown voltage Large collector dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency high voltage power amplifier TV power supply drivers ABSOLUTE MAXIMUM RATINGS(T
9.36. Size:187K inchange semiconductor
2sc1756.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1756 DESCRIPTION High breakdown voltage Large collector dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF output of color TV for video output AF output of B/W TV ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
9.38. Size:177K inchange semiconductor
2sc1777.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1777 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
9.39. Size:182K inchange semiconductor
2sc1730.pdf 
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1730 DESCRIPTION Low Base Time Constant; r = 10 ps TYP. bb CC High Gain Bandwidth Product f = 1100 MHz TYP. T Low Output Capacitance; C = 1.5 pF Max. OB Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV VHF, UHF tuner oscillator applications. ABS
9.40. Size:177K inchange semiconductor
2sc1785.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1785 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
9.41. Size:178K inchange semiconductor
2sc1783.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1783 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
Другие транзисторы: 2SC1784, 2SC1785, 2SC1786, 2SC1787, 2SC1788, 2SC1788A, 2SC1789, 2SC179, BC549, 2SC1791, 2SC1792, 2SC1793, 2SC1797, 2SC1798, 2SC1799, 2SC179H, 2SC17A
