2SC2025. Аналоги и основные параметры
Наименование производителя: 2SC2025
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 35 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 2200 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO72
Аналоги (замена) для 2SC2025
- подборⓘ биполярного транзистора по параметрам
2SC2025 даташит
8.7. Size:23K sanken-ele
2sc2023.pdf 
2SC2023 Silicon NPN Triple Diffused Planar Transistor Application Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) (Ta=25 C) Symbol 2SC2023 Symbol Conditions 2SC2023 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 300 ICBO VCB=300V 1.0max V mA VCEO 300 IEBO VEB=6V 1.0max V mA VEBO 6
8.8. Size:184K inchange semiconductor
2sc2022.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2022 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
8.9. Size:184K inchange semiconductor
2sc2023.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2023 DESCRIPTION Silicon NPN triple diffused planar transistor Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMU
8.10. Size:175K inchange semiconductor
2sc2026.pdf 
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION Low Noise NF= 3.0dB TYP. @ f= 500MHz High Power Gain G = 15dB TYP. @ f= 500MHz pe High Gain Bandwidth Product f = 2.0GHz TYP. T 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise amplifiers in the VHF
8.11. Size:177K inchange semiconductor
2sc2027.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2027 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
8.12. Size:184K inchange semiconductor
2sc2028.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2028 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
Другие транзисторы: 2SC2018, 2SC2019, 2SC202, 2SC2020, 2SC2021, 2SC2022, 2SC2023, 2SC2024, 2N2907, 2SC2026, 2SC2027, 2SC2028, 2SC2029, 2SC203, 2SC2031, 2SC2032, 2SC2033
