2SC2025 Datasheet and Replacement
Type Designator: 2SC2025
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35
W
Maximum Collector-Base Voltage |Vcb|: 35
V
Maximum Collector-Emitter Voltage |Vce|: 18
V
Maximum Emitter-Base Voltage |Veb|: 3
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 2200
MHz
Collector Capacitance (Cc): 2
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
TO72
-
BJT ⓘ Cross-Reference Search
2SC2025 Datasheet (PDF)
8.7. Size:23K sanken-ele
2sc2023.pdf 
2SC2023Silicon NPN Triple Diffused Planar TransistorApplication : Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) (Ta=25C)Symbol 2SC2023 Symbol Conditions 2SC2023Unit Unit0.24.80.210.20.12.0VCBO 300 ICBO VCB=300V 1.0maxV mAVCEO 300 IEBO VEB=6V 1.0maxV mAVEBO 6
8.8. Size:184K inchange semiconductor
2sc2022.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2022DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
8.9. Size:184K inchange semiconductor
2sc2023.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2023DESCRIPTIONSilicon NPN triple diffused planar transistorCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMU
8.10. Size:175K inchange semiconductor
2sc2026.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2026DESCRIPTIONLow NoiseNF= 3.0dB TYP. @ f= 500MHzHigh Power GainG = 15dB TYP. @ f= 500MHzpeHigh Gain Bandwidth Productf = 2.0GHz TYP.T100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise amplifiers in the VHF
8.11. Size:177K inchange semiconductor
2sc2027.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2027DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
8.12. Size:184K inchange semiconductor
2sc2028.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2028DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Datasheet: 2SC2018
, 2SC2019
, 2SC202
, 2SC2020
, 2SC2021
, 2SC2022
, 2SC2023
, 2SC2024
, 2SC2482
, 2SC2026
, 2SC2027
, 2SC2028
, 2SC2029
, 2SC203
, 2SC2031
, 2SC2032
, 2SC2033
.
History: MSD42SWT1G
| 2SC62
| TRF641
| BC858BWT1
| CMPT6428
| BCY38A
| BFG10WX
Keywords - 2SC2025 transistor datasheet
2SC2025 cross reference
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