2SC2387 - описание и поиск аналогов

2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Unit mm Color TV Class-B Sound Output Applications High breakdown voltage VCEO = 160 V Large continuous collector current capability Recommended for vertical deflection output & sound output applications for line-operated TVs. Complem

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25 C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V C

2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone (818) 701-4933 2SC2383-Y Fax (818) 701-4939 Features Capable of 0.9Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Collector-base Voltage 160V Plastic-Encapsulate Operating and storage junction temperature range -55O

2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone (818) 701-4933 2SC2383-Y Fax (818) 701-4939 Features Capable of 0.9Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Collector-base Voltage 160V Plastic-Encapsulate Operating and storage junction temperature range -55O

2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone (818) 701-4933 2SC2383-Y Fax (818) 701-4939 Features Capable of 0.9Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Collector-base Voltage 160V Plastic-Encapsulate Operating and storage junction temperature range -55O

2SC2383P Electrical Characteristics @ TA=25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=100 A, IE=0 Collector-Base Breakdown Voltage 160 V V(BR)CEO IC=10mA, IB=0 Collector-Emitter Breakdown Voltage 160 V V(BR)EBO IE=10 A, IC=0 Emitter-Base Breakdown Voltage 6 V ICBO VCB=150V, IE=0 Collector-Base Cutoff Current 1 A IEBO VEB=6V, IC=0

UNISONIC TECHNOLOGIES CO., LTD 2SC2383 Preliminary NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT & COLOR TV VERTICAL OUTPUT DESCRIPTION The UTC 2SC2383 is an NPN epitaxial silicon transistor, it uses UTC s advanced technology to provide customers high DC current gain and high breakdown voltage. The UTC 2SC2383 is usually used in Color TV Vertical Deflection Output

2SC2383 1A , 160V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application 1 2 3 B C A CLASSIFICATION OF hFE E E C Product-Rank 2SC2383-O 2SC2383-Y Range 100 200 160 320 B D F G H K Collector PACKAGE INFORMATI

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC2389S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Breakdown Voltage. 3. BASE Complements the 2SA1038S. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors JC T TO-92MOD 2SC2383 TRANSISTOR (NPN) FEATURE 1. EMITTER High Voltage VCEO=160V 2. COLLECTOR Large Continuous Collector Current Capability Complementary to 2SA1013 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base

2SC2383 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 High voltage VCEO=160V 0.600 0.800 Large continuous collector current capability Complementary to 2SA1013 0.350 0.550 13.800 14.200 1.270 TYP Dimensions in inches and (millimeters) 2.440 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.640 0.

2SC2383 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE 5.800 Features 6.200 High voltage VCEO=160V 8.400 8.800 Large continuous collector current capability 0.900 Complementary to 2SA1013 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25 unless otherwis

SMD Type Transistors NPN Transistors 2SC2383 1.70 0.1 Features High voltage VCEO=160V Large continuous collector current capability 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector

2SC2383 NPN Transistors Features Excellent h characteristics FE 3 2 1.Base 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Base Current IB 0.5 A Collector Power

2SC2383 SOT-89 NPN Transistors 3 Features 2 Small Flat Package 1.Base 1 General Purpose Application 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 1

INCHANGE Semiconductor isc Silicon NPN Pow Transistor 2SC2383 DESCRIPTION High breakdown voltage Low output capacitance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV class B sound output applications Color TV vert.deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col